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...Transistor With RoHS Certificate Metal Oxide Semiconductor Field Effect Transistor Features Low gate charge Low Rdson(typical 5.5mΩ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS produc...
...Channel Field Effect Transistor With Low Level Drive N Channel Field Effect Transistor Features High input impedance and low level drive Avalanche energy tested Improved dv/dt capability,high ruggedness N Ch...
... Speed Field Effect Transistor For Power Factor Correction Field Effect Transistor Features High input impedance and low level drive Avalanche energy tested Improved dv/dt capability,high ruggedness Field Ef...
...transistor TO-220F MOS FET N-Channel transistor Original Package Features: 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche te...
AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor Features: Model Number:AO3400 Type:MOSFET Package Type:Surface Mount Product Name:AO3400 Other name:AO3400A Marking:A09T ......
... Low reverse transfer capacitance Fast switching capability Avalanche energy specified General description of insulated gate bipolar transistor The 3N80 provide excellent RDS(ON)low gate charge and...
60V TO-263 n channel transistor TO-220 advanced power field effect transistor Mosfet n channel features: FET Type:N-Channel Enhancement mode Very low on-resistance Flexible and very practical High switching cap...
RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEA...
G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching l...
...Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout a...
TIP42C PNP 100V 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this de...
...Transistors TO-3P TIP147 10A 100V PNP Darlington Bipolar Power Transistor TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “base...
FDS6699S transistor MOS tube N channel SOIC-8 Products Description : 1. Product Model :FDS6699S 2. Description: MOSFET 3. FDS6699S transistor MOSFET N channel 21 A 30 V 3.6 MoHM 10 V 1.4 V 4. High performance T...
...MOSFET POWER TRANSISTOR IRFB38N20DPBF N- CHANNEL SMPS MOSFET FET Type: N-Channel Drain To Source Voltage: 200V Current - Continuous Drain: 43A Drive Voltage: 10V High Light: high power mosfet transistors , n...
...TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free Status /...
...mosfet transistors , n channel mosfet transistor KIA7805AF 5V THREE TERMINAL POSITIVE VOLTAGE REGULATORS Internal Thermal Overload Protection FEATURES ・Internal Thermal Overload Protection. ・......
...TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light...
.... It is commonly used in power supply circuits and other switching applications. Specification item value Model Number WSF28N06 Type Bipolar Transistor Place of Origin China Guangdong D/C...
FGH40N60SFD Igbt Transistors 600V 40A Field Stop Transistor TO-247-3 290W Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs ......
IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losse...