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SRF7096 is a SCHOTTKY BARRIER RECTIFIER Part NO: SRF7096 Brand: freescale Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency m...
M9002N is a SMT TCXO Module . Part NO: M9002N Brand: freescale Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave de...
ELM1314-30F is a Single N-channel MOSFET . Part NO: ELM1314-30F Brand: FREESCALE Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High freq...
P0622101H is a VCXO 200MHz to 1000MHz . Part NO: P0622101H Brand: eudyna Date Code: 09+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency mi...
PTF10048 is a Power Modules . Part NO: PTF10048 Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave d...
NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURE...
Silicon PNP Power Transistors 2SA1943 DESCRIPTION ·With TO-3PL package ·Complement to type 2SC5200 APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output...
TOSHIBA Transistor Silicon PNP Epitaxial Type Power Amplifier Applications Driver Stage Amplifier Applications High transition frequency: fT = 70 MHz (typ.) Complementary to 2SC4793 Note: Using continuously...
PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ABSOLUTE MAXIMUM RATING (TA=25°C,...
Product Overview The BFR193 is a low-noise silicon bipolar RF transistor designed for high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It offers a transition frequency (fT) of 8 GHz and a minim...
Product Overview The BFR193W is a low-noise silicon bipolar RF transistor designed for high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It features a transition frequency (fT) of 8 GHz and a mi...
...BFP196 is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It is also suitable as a power amplifi...
Product Overview The INCHANGE Semiconductor 2SA1837 is a Silicon PNP Power Transistor designed for power amplifier and driver stage amplifier applications. It features a high current-gain bandwidth product and ...
... Silicon PNP Epitaxial Type transistor designed for power amplifier applications. It serves as a complementary component to the TTC5200 and is recommended for the output stage of 100-W high-fidelity audio fr...
Product Overview This is a Silicon Bipolar Epitaxial Planar NPN-PNP paired power amplifier transistor designed for high-fidelity audio amplifier pre-stage driving. It offers a large output current of up to 8A a...
...triple diffused power transistor designed for power amplifier applications. It is complementary to the MJL21193 and features a high collector voltage of 250V (min), making it recommended for 100-W high-fidel...
...Transistor designed for high-fidelity audio frequency amplifier output stages. It is recommended for 100-W applications and offers a complementary pairing with the NJW0281G. Key features include a high colle...
...a Minos Silicon PNP Epitaxial Type transistor designed for Power Amplifier Applications. It serves as a complementary component to the 2SC5198 and is recommended for 100-W high-fidelity audio frequency ampli...
...epitaxial power transistor designed for high-fidelity audio frequency amplifier output stages. It offers a high collector voltage of -250V (min) and is complementary to the MJL21194. This device is recommend...
...-purpose amplifier and switching transistor, ideally suited for automatic insertion. It features an epitaxial planar die construction and has a complementary NPN type available (BC817). This device is design...