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...have a complementary NPN type available (BC817). These devices are designed for general purpose amplifier and switching applications at currents up to 1.0A.Product Attributes Brand: DEMACHEL Type: SOT-23 Mar...
...purpose amplifier and switching transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications, with a useful dynamic range extending to 600mA a...
Product Overview High-Frequency Amplifier Transistor with high transition frequency, small rbb`Cc and high gain, and low Noise Factor. Designed for amplifier applications.Product Attributes Brand: LESHAN RADIO ...
...2SD1383K is a high-gain amplifier transistor featuring a Darlington connection for high DC current gain and a built-in 4k resistor between base and emitter. It complements the 2SB852K and is designed for hig...
...transistor designed for microwave low-noise amplifier applications. Manufactured using silicon epitaxial process technology, it offers high power gain, wide bandwidth, low noise, low leakage current, and sma...
...Transistor offers low collector saturation voltage and high DC current gain, ensuring high reliability and minimum lot-to-lot variations for robust device performance. It is suitable for applications includi...
...PNP epitaxial transistor featuring excellent hFE linearity, high voltage capability (VCEO = -50 V min), and a complementary nature to the 2SC3325. It is designed for audio frequency low power amplifier appli...
Product Overview The 2SC4738 is a silicon NPN epitaxial transistor designed for low-frequency amplifier applications, including AM amplifiers. It offers high voltage (VCEO = 50 V), high collector current (IC = ...
...Overview The TOSHIBA 2SA1182 is a silicon PNP epitaxial transistor manufactured using the PCT process. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications...
..., and AM amplifiers. Key features include high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), excellent ......
2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Electrical Characteristics (Tc = 25C) Cha...
SZHUASHI 100% New YP40601625T 30W 50V 5700- 5900MHz PA Power Amplifier RF Power Transistor with Standard Features Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for mult...
Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz...
KTD1047 NPN Transistor Complementary to KTB817 for 60w High Power Amplifier Application CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V ......
CYW43362KUBGT RF Power Transistor 2.4 GHz WLAN CMOS amplifier Package 69-UFBGA Type TxRx + MCU RF Family/Standard WiFi Protocol 802.11b/g/n Modulation 16QAM, ......
MW6IC2240NB is a RF LDMOS Wideband Integrated Power Amplifier. Part NO: MW6IC2240NB Brand: FREESCALE Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD spec...
LM741H Power Mosfet Tansistor Operational Amplifier General Description The LM741 series are general purpose operational amplifiers which feature improved performance over industry standards like the LM709. The...
Product Overview The 2N5551-MMBT5551 is an NPN general purpose amplifier designed for high voltage applications. It is suitable for use in high voltage amplifiers and gas discharge display drivers. The device i...
...TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2 . Part NO: PRF6P21190H Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD s...
...TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2 . Part NO: PRF6P23190H Brand: Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specialize...