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...transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It features high power gain, low noise characteristics, and a large dynamic range. Its ultra-small SOT-323 package makes it ideal for high-d...
...AF amplifier applications. This surface-mount device comes in a SOT-323 package.Product Attributes Complementary to BC846W Ideally suited for automatic insertion For switching and AF amplifier applications S...
...transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It features high power gain, a low noise figure, a large dynamic range, and ideal current characteristics. Packaged in an SC59 surface-mount...
Product Overview The TIP42C is an audio power amplifier transistor designed for high-power audio applications. It offers robust performance and is suitable for various audio amplification circuits.Product Attri...
...transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It utilizes a planar process and offers high power gain, a low noise figure, a large dynamic range, and ideal current characteristics. Packa...
...transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It features high power gain, low noise figure, wide dynamic range, and ideal current characteristics. Packaged in an SC-59 surface-mount pac...
Product Overview The 2SB562 is a PNP bipolar junction transistor designed for low-frequency power amplifier applications. It offers a complementary pair with the 2SD468 and comes in a TO-92 package.Product Attr...
Product Overview The BFS17P is an NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz and for mixers and oscillators in sub-GHz applications. It offers excellent performance with a low noise...
Product Overview The BFR183 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents ranging from 2 mA to 30 mA, offering a transition frequenc...
Product Overview The BFR193L3 is an NPN Bipolar RF Transistor designed for low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It features a transition frequency (fT) of 8 GHz and a min...
Product Overview The BFR93AW is a low-noise silicon bipolar RF transistor designed for low distortion amplifiers and oscillators operating up to 2 GHz. It is suitable for collector currents ranging from 5 mA to...
Product Overview The BFR93A is a low-noise silicon bipolar RF transistor designed for low-noise, high gain broadband amplifiers. It is suitable for collector currents ranging from 2 mA to 30 mA and is Pb-free (...
Product Overview The BFR92P is a low-noise silicon bipolar RF transistor designed for broadband amplifiers up to 2 GHz and fast non-saturated switches. It operates with collector currents ranging from 0.5 mA to...
Product Overview The 2SA1869 is a Silicon PNP Power Transistor from ISC, designed for power amplifier applications. It features a collector-emitter breakdown voltage of -50V, good linearity of hFE, and is a com...
Product Overview The BFS17W is a NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz. It operates at collector currents ranging from 1 mA to 20 mA and comes in a Pb-free (RoHS compliant) pac...
... bipolar RF transistor designed for UHF/VHF applications. It offers high linearity with 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, making it suitable as a driver for multistage amplifiers and for linear broadba...
Product Overview The BFP193 is a low-noise silicon bipolar RF transistor designed for high-gain and linear broadband amplifiers up to 2 GHz. It offers excellent performance with a transition frequency (fT) of 8...
...transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for battery chargers, electronic ...
...transistor designed for various power applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for chargers, electronic ballasts, high-frequency s...
Product Overview The BFR182W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates effectively at collector currents ranging from 1 mA to 20 mA, offering a transi...