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Product Overview The 3356 is a silicon-based microwave bipolar transistor primarily used in high-frequency electronic amplifier circuits. It offers a low noise figure and a high cutoff frequency, making it suit...
Product Overview These PNP silicon transistors are designed for general-purpose amplifier applications. They are housed in the SOT-323/SC-70 package, suitable for low-power surface mount applications. The devic...
Product Overview The LBTP180Y3T1G and S-LBTP180Y3T1G are PNP medium power transistors designed for general purposes and driver stages of audio amplifiers. They offer high current and low voltage capabilities, w...
Product Overview These dual general purpose transistors from LESHAN RADIO COMPANY, LTD. are designed for amplifier applications. Housed in the SOT363/SC88 package, they are suitable for low power surface mount ...
Product Overview Dual General Purpose Transistors (NPN/PNP Complimentary) designed for general purpose amplifier applications. Housed in the SOT363/SC88 package, ideal for low power surface mount applications.P...
Product Overview Dual General Purpose Transistors (NPN/PNP Complimentary) designed for general purpose amplifier applications. Housed in the SOT363/SC88 package for low power surface mount applications.Product ...
Product Overview The L2SC3356LT1 is an NPN silicon epitaxial transistor specifically engineered for low-noise amplifier applications across VHF, UHF, and CATV bands. It offers excellent dynamic range and favora...
Product Overview These NPN dual general-purpose transistors are designed for amplifier applications and are housed in the SOT363/SC88 package, suitable for low-power surface mount applications.Product Attribute...
Product Overview Dual General Purpose Transistors (NPN/PNP Complimentary) designed for general purpose amplifier applications. Housed in the SOT363/SC88 package for low power surface mount applications.Product ...
Product Overview The LBTP180Y3T1G and S-LBTP180Y3T1G are PNP medium power transistors designed for general purposes and driver stages of audio amplifiers. They offer high current and low voltage capabilities, w...
Product Overview These NPN silicon transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package, which is suitable for low power surface mount applications. Pb-Free ...
Product Overview The 2SD2153 is a high-gain amplifier transistor designed for low-frequency power amplification. It features low saturation voltage and high DC current gain, making it suitable for ......
Product Overview The 2SD2226K is a general-purpose NPN transistor designed for low-frequency amplifier applications. It features high DC current gain, high emitter-base voltage, and low saturation voltage, maki...
Product Overview The 2SCRC41C / 2SC4102U3 is a high-voltage amplifier transistor designed for high-voltage amplification applications. It features a high breakdown voltage (BVCEO=120V) and complements the 2SARA...
...silicon epitaxial bipolar transistor. It offers high power gain and low noise characteristics, making it ideal for high-density surface mount applications. Primarily used in VHF, UHF, and CATV high-frequency...
Product Overview This NPN transistor, housed in an SOT-23 package, is designed for switching and AF amplifier applications. It offers reliable performance with key parameters such as Collector Base Voltage (VCB...
...-emitter saturation voltage, making them suitable for medium power general purposes and driver stages of audio amplifiers. Complementary types include BCX54, BCX55, and BCX56. Product Attributes Packaging: S...
Product Overview The TIP120, TIP121, and TIP122 are NPN Darlington power transistors designed for general-purpose amplifier and low-speed switching applications. These RoHS Compliant devices offer robust perfor...
Product Overview The TOSHIBA 2SC4207 is a silicon NPN epitaxial transistor utilizing the PCT process, designed for audio frequency general-purpose amplifier applications. It features a small package (dual type)...
Product Overview The TOSHIBA 2SC4944 is a silicon NPN epitaxial transistor utilizing the PCT process. It is designed for audio frequency general-purpose amplifier applications. Key features include a small pack...