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... MOSFET transistor. With a superior voltage tolerance of up to 600 volts and a maximum current capacity of 80 amps, this N-channel power MOSFET is perfect for a wide range of switching applications. Its vers...
JY16M N Channel 600V TO220F-3 Package Enhancement Mode Power MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY16M utilizes the latest trench processing techniques to achieve the high cell density and redu...
JY14M N Channel Enhancement Mode Power MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY14M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance ...
JY2605M Dual N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION The product utilizes the latest trench processing techniques to achieve the high cell density and red...
JY4N8M N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces t...
JUYI 500W 8A N Channel Enhancement Mode Power MOSFET Factory for 3 Phases DC Motor Driver GENERAL DESCRIPTION The product utilizes the advanced planar processing techniques to achieve the highcell density and r...
BSZ100N03MSGATMA1 MOSFET BSZ100N03MS GSP000311510 MSP430F5514IRGCT LPC812M101JD20 Discrete Semiconductors MOSFET OptiMOS TM3 M-Series Power-MOSFET, 30 V Features ●Optimized for 5V driver aplication (Notebook, V...
BSZ100N03MSGATMA1 MOSFET BSZ100N03MS GSP000311510 MSP430F5514IRGCT LPC812M101JD20 Discrete Semiconductors MOSFET OptiMOS TM3 M-Series Power-MOSFET, 30 V Features ●Optimized for 5V driver aplication (Notebook, V...
MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and d...
MRF6V3090NBR1 RF Mosfet LDMOS 50V 350mA 860MHz 22dB 18W TO-272 WB-4 Designed for broadcast and commercial aerospace broadband applications with frequencies from 470 to 1215 MHz. Features 1, Capable of Handling ...
MOSFET N-CH 1500V 2A IC Chip TO-3P 2SK2225-80-E-T2 2SK2225 Products Description: 1. Silicon N Channel MOS FET Silicon N Channel MOS FET, through hole N Channel 2A (Ta) 50W (Tc) TO 3PFM 2.Trans MOSFET N-CH Si 1....
IRLR2905ZTRPBF MOSFET Power Transistor High Performance Low On Resistance Fast Switching Features: • Logic Level Gate Drive, 4.5V to 20V • Low On-Resistance ......
... drain current of 12A and a voltage ratingof 600v, the SIHF12N60E-E3 N-Channel Transistor is capable of handling highpower applications. 2. Low On-Resistance: The MOSFET's low on-resistance of 0.270 at 10V g...
IRFB3806PBF MOSFET Power Transistor High Voltage High Current Switching Device Parameters: • Drain-Source Voltage (Vdss): 100V • Current - Continuous Drain (......
IRFB4620PBF MOSFET Power Transistor High Performance Reliable Power Switching Features: 200V Drain-Source Voltage (VDS) 8.9A Continuous Drain Current (ID) at 25C 12.3A Continuous Drain Current (ID) at 10...
IRLML6402TRPBF MOSFET Power Supply Transistor High Performance Low On-Resistance Parameters: VDS: -20V RDS(on): 0.0045Ω ID: 3.2A Package: SOT-23 Polarity: P-......
...: N-Channel • Power Dissipation (Max): 16.5 W • Transistor Case Style: TO-220AB • Continuous Drain Current (Id): 11 A • No. of Pins: 3 • Operating Temperature Range: -55°C to 175°C • Mounting ......
IRFR3410TRPBF MOSFET Power Transistor High-Performance Low On-Resistance for Maximum Efficiency Product Parameters: Drain-Source Voltage: 60V Gate-Source Voltage: 20V Continuous Drain Current: -14A Pow...
NTHD3101FT1G 8-SMD MOSFET Power Electronics Transistor for High-Frequency Switching Applications Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 3.2A (......
Fairchild FCP190N60-GF102 N-Channel MOSFET Power Electronics Transistor for High-Speed Switching Applications Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 20.......