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13P10D -100V Mosfet Power Transistor For Power Management ESD Protested DESCRIPTION The 13P10D uses advanced trench technology and design to provide excellent RDS(ON) with low ......
G420ND06LR1S Mosfet Power Transistor For Battery Protection 60V/5A Feature Description 60V/5A R DS(ON) = 40 mΩ(typ.)@V GS = 10V R DS(ON) = 48 mΩ(......
High Voltage Switching Mosfet Power Transistor With High Thermal Resistance General Description The AOD407 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance...
Small P Channel Mosfet High Side Switch / Low Power Transistor Long Life General Description The AOD413A uses advanced trench technology and design to provide excellent R DS(ON) with low gate ......
AOD424 20V N-Channel MOSFET General Description The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for load switch and b...
AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or...
AOD442G 60V N-Channel MOSFET General Description The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . Those devices are suitable for use ...
6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and ......
MOSFET Transistor AP2N1K2EN1 Original Electronic Component / IC Chips Description AP2N1K2E series are from Advanced Power innovated design and silicon process ......
...t have been developed and addressed by different manufacturers. They use a number of different techniques that enable the power MOSFETs to carry the current and handle the power levels more efficiently. As a...
SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 m@ 4.5V 5.0 A < VGS = z RDS(on) < m@VGS = 2.5V 40 z z 20 40 z RDS(on) < 53 m@VGS = 1.8V APPLICATION z DC/DC Converters z Load...
Product Detail Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25C 115mA (Ta) Drive Voltage (M...