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AOD424 20V N-Channel MOSFET General Description The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for load switch and b...
...20V 12A 10mr transistor mosfet alternative for AP6982GN2-HF Description: AP6982 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and ...
MOSFET Transistor AP2N1K2EN1 Original Electronic Component / IC Chips Description AP2N1K2E series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resist...
HBR10100 TO-220 TO-263 TO-220HF 10A 100V Voltage Regulator Tube Transistor Rectifier APPLICATIONS High frequency switch power supply Free wheeling diodes, polarity protection applications FEATURES Common c...
... SO8 30V N - Channel Transistor MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 7.5 A FEATURES • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to...
...Transistors LOW LOSS DuoPack 1200V 25A ●Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D ●Short circuit withstand time – 10s ●Designed for : - Frequency Converters - Uninterrupted Power...
DMP2035U-7 Discrete Semiconductors Transistors MOSFET LMBT3904LT1G MMBT3904LT1 Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & F...
IKWH50N65WR6XKSA1 IGBT Transistors HOME APPLIANCES 14 Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs are optimized for full-rated hard ...
... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low ...
...Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MD...
HBR10100 TO-220 TO-263 TO-220HF 10A 100V Voltage Regulator Tube Transistor Rectifier APPLICATIONS High frequency switch power supply Free wheeling diodes, polarity protection applications FEATURES Common c...
10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shi...
...Transistor For Battery Protection 60V/5A Feature Description 60V/5A R DS(ON) = 40 mΩ(typ.)@V GS = 10V R DS(ON) = 48 mΩ(typ.)@V GS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green...
AOD424 20V N-Channel MOSFET General Description The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for load switch and b...
...20V 12A 10mr transistor mosfet alternative for AP6982GN2-HF Description: AP6982 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and ...
MOSFET Transistor AP2N1K2EN1 Original Electronic Component / IC Chips Description AP2N1K2E series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resist...
SOT-89-3L Plastic-Encapsulate Transistors 2SD965A 2SD965A FEATURE Audio amplifier Flash unit of camera Switching circuit Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Uni...
...Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET Power MOSFET APPLICATION DC/DC Converters Load Switching for Portable Applications Maximum ratings (Ta......
18N20X 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device...
... SO8 30V N - Channel Transistor MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 7.5 A FEATURES • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to...