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Total 10000 products for transistor switch npn Manufacture & Suppliers

ULN2004ADR holt integrated circuits common integrated circuits HIGH-VOLTAGE HIGH-CURRENT DARLICM GROUPON TRANSISTOR ARRAY

...ordering information The ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, and ULQ2004A are high-voltage, high-current DarliCM GROUPon transistor arrays. Each consists of seven npn DarliCM GROUPon pairs that...

ChongMing Group (HK) Int'l Co., Ltd
China

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SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation

SOT-89 D882 Plastic-Encapsulate Transistors Features Power dissipation MAXIMUM RATINGS (Ta=25�� unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage...

Guangdong Uchi Electronics Co.,Ltd
Guangdong,China

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SOT-323 SS8050W NPN Silicon Epitaxial Planar Transistor for High Collector Current

SOT-323 high frequency low noise transistor(PNP) FEATURES - Collector Current.(IC= 1.5A) - Complementary To SS8550W. - Collector dissipation:PC=200mW(TC=25��) APPLICATIONS - High Collector Current. ORDERING INFO...

Guangdong Uchi Electronics Co.,Ltd
Guangdong,China

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BCX54-10-QX 45V PNP Transistor 1A Collector Current Low VCE(sat) 250mV TO-243AA Package High Current Gain (hFE 100-630) AEC-Q101 Qualified for Automotive Applications

BCX54-10-QX andnbsp; 1. General description andnbsp;NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits andbull; High ......

TOP Electronic Industry Co., Ltd.
China

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IRFBG30PBF 3 Pin Transistor Electrnocs Component Transistor Chip IC Electronics

... Requirements • Lead (Pb)-free Available Discriptions Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance ...

ChongMing Group (HK) Int'l Co., Ltd
China

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2N5459 Power Mosfet Transistor N-Channel To-92 Original Stock FSC

... and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* Symbol Parameter Value Units VDG Drain-Gate Voltage ......

ChongMing Group (HK) Int'l Co., Ltd
China

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GaN IC IGLD60R070D1AUMA3 N-Channel 600V 15A Enhancement Mode Transistor 8-LDFN

... Mode Transistor 8-LDFN Product Description Of IGLD60R070D1AUMA3 IGLD60R070D1AUMA3 is N-Channel 600V 15A Enhancement Mode Transistor. Feature Of IGLD60R070D1AUMA3 Enhancement mode transistor – Normally OFF s...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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20G04GD 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET

20G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04GD uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in P...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24m�� RDS(ON) (at VGS = 4.5V) < 30m�� RDS(ON) (at VGS = 2.5V) < 48m�� General Description The HXY4404 uses advance...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY4410 N Type Transistor Load Switching For Portable Applications

60V N-Channel AlphaSGT HXY4264 Product Summary VDS (V) = 30V I = 18A D RDS(ON) < 11m �� (VGS = 10V) RDS(ON) < 19m �� (VGS = 4.5V) General Description The HXY4410 uses advanced trench technology to provide excelle...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application

18N20X 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge

HXY12N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applic...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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High Performance Mosfet Power Transistor With Extreme High Cell Density

General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low com...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Low R DS(ON) Mosfet Power Transistor Battery Protection Switch Use

AOD424G 20V N-Channel MOSFET General Description �� Trench Power MOSFET technology �� Low R DS(ON) �� RoHS and Halogen-Free Compliant Application �� DC/DC Converters in Computing, Servers, and POL �� Battery protect...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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FDPF44N25T 250V 44A TO-220FP Tube Mosfet Power Transistor

FDPF44N25T Trans MOSFET N-CH 250V 44A 3-Pin(3+Tab) TO-220FP Tube Description : UniFETTM MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is ...

Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong,China

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AP2322GN LOGIC ICS 0.833W 10A MOSFET Power Switch

AP2322GN Original General Purpose Power Transistor/MOSFET/Power Switch IC Chips This product is sensitive to electrostatic discharge, please handle with care. This product is not authorized to be used as a crit...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application

Suitable for high frequency switching power supply 20A 200V Schottky Barrier Diode HBR20200 TO-220C TO-220HF TO-263 APPLICATIONS �� High frequency switch power supply �� Free wheeling diodes, polarity protection ...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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High Performance Mosfet Power Transistor With Extreme High Cell Density

General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low com...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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WG50N65DHWQ IGBT Transistor Module , Field Stop Trench IGBT 650V 91A 278W

WG50N65DHWQ IGBT Trench Field Stop 650 V 91 A 278 W Through Hole TO-247-3 WeEn Semiconductors WG50N65DHWQ IGBT WeEn Semiconductors WG50N65DHWQ IGBT is a high-speed 650V/50A IGBT with an anti-parallel diode in a...

HongKong Wei Ya Hua Electronic Technology Co.,Limited
China

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FDPF44N25T 250V 44A TO-220FP Tube Mosfet Power Transistor

FDPF44N25T Trans MOSFET N-CH 250V 44A 3-Pin(3+Tab) TO-220FP Tube Description : UniFETTM MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is ...

Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong,China

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