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... Switching Product Summary The G40N10 uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Batter...
...pleased to quote you our best price . Thank you ! A transistor is a semiconductor device that is used to amplify or switch electronic signals. A microcontroller IC is a semiconductor device that contains ele...
...using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in ...
... power amplifiers. FEATURES ●Suitable for use in driver stage of 50 to 100 W audio amplifiers and output stage of TV vertical deflection circuit. ●High Voltage and High ......
... control Switch Mode Power Supplies (SMPS) Power-Over-Ethernet (PoE) Solar inverters Automotive applications Logic Level Transistor Description: The AP50N10P uses advanced trench technology to provide excell...
... control Switch Mode Power Supplies (SMPS) Power-Over-Ethernet (PoE) Solar inverters Automotive applications Logic Level Transistor Description: The AP50N10P uses advanced trench technology to provide excell...
Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use IRLR7843PbF IRLU7843PbF Description Power MOSFET Selection for Non-Isolated DC/DC Converters Absolute Maximum Ratings Paramet...
...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...
... switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in...
Transistor MOSFET N channel 30A 200V 75MOHM 10V MOS tube IRFP250NPBF Products Description: 1.IRFP250NPBF transistor, MOSFET, N channel, 30 A, 200 V, 75 MoHM, 10 V, 4 V 2.The to-247 package is preferred for Comm...
Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum ......
SI4438-B1C-FMR RF Power Transistor Product Overview: The SI4438-B1C-FMR is a high-performance RF power transistor designed for use in a wide range of applications, including base stations, portable radios, and ...
SI4432-B1-FMR RF Power Transistor Description: The SI4432-B1-FMR is a RF power transistor designed for use in high power, broadband applications such as cellular, Wi-Fi, and other wireless communication systems...
... Listing: AD8364ACPZ-REEL7 RF Power Transistors Description: The AD8364ACPZ-REEL7 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) RF power transistor designed for use in cellular ...
Product: ADL5350ACPZ-R7 RF Power Transistors Description: The ADL5350ACPZ-R7 is an RF power transistor for use in cellular and wireless base station, industrial, scientific and medical (ISM) applications. Featu...
... applications. This device offers excellent linearity and efficiency, and is capable of delivering up to 17 dB gain and 50 W of output power. It is ideal for use in broadband power amplification applications...
AD8351ARMZ-REEL7 RF Power Transistor Product Description: The AD8351ARMZ-REEL7 is an advanced silicon bipolar power transistor specifically designed for use in RF power amplifiers applications. It is a high per...
HMC788ALP2ETR, RF Power Transistor Description: The HMC788ALP2ETR is a GaN on Silicon Carbide (SiC) RF power transistor that is designed for use in high power, wideband communication systems. It operates over t...
AD9361BBCZ RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide ga...
...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...