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...Transistor NEC NPN Power Transistor Switching High Speed Silicon NPN Power Transistor NEC 2SD1594 DESCRIPTION · With TO-220Fa package · Low collector saturation voltage A PPLICATIONS · Low frequency power am...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature 30V/100A R DS(ON) = 2.4mΩ(typ.) @V GS = 10V R DS...
Enhancement Mode Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enab...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature 30V/100A R DS(ON) = 2.4mΩ(typ.) @V GS = 10V R DS...
Enhancement Mode Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enab...
... to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications). VDS (V)...
AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
... Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inv...
...Transistor / Logic Mosfet Switch Surface Mount Package N Channel Transistor Description The 18N20X uses advanced Plane technology to provide excellent Rds(on), low gate charge and operation with gate voltage...
... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and si...
...Channel Enhancement Mode Field Effect Transistor General Description The AOD464 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use ...
... N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.This device is suitable for u...
... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and si...
...Transistor / Logic Mosfet Switch Surface Mount Package N Channel Transistor Description The 18N20X uses advanced Plane technology to provide excellent Rds(on), low gate charge and operation with gate voltage...
...Channel Enhancement Mode Field Effect Transistor General Description The AOD464 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use ...
... N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.This device is suitable for u...
... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and si...
... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and si...