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...Source Breakdown Voltage 150 V Descriptions of Aviation Parts: MOSFT 150V 2.6A 185mOhm 19nC Features of Aviation Parts: Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Inc...
...resistance and low gate charge, making it suitable for a wide range of applications. Parameters: • Drain-Source Voltage: 100V • Continuous Drain Current: 10A • Drain-Source On-Resistance: 0.090Ω • Gate Charg...
...Drain-Source Voltage (VDS): 40V - Gate-Source Voltage (VGS): 20V - Continuous Drain Current (ID): 10A - Power Dissipation (PD): 1.8W - RDS(on): 0.082 ohm - Minimum Operating Temperature: -55°C - Maximum Oper...
...Current: 24A • Maximum Drain Source Voltage: 30V • RDS(on): 0.067 Ohms • Gate Charge: 28.7 nC • Operating Temperature Range: -55°C to 175°C • Mounting Type: Surface Mount Product Status Active FET Type N-Cha...
...Source Voltage (VDS): 650 V • Continuous Drain Current (ID): 28 A • RDS(on): 0.26 Ohms • Gate Charge (Qg): 52 nC • Input Capacitance (Ciss): 880 pF • Operating Temperature Range: -55°C to 175°C • Package Typ...
... drain source voltage of 100V. It has a drain-source on-resistance of 0.024Ω and a maximum drain current of 41A. It is also capable of sustaining a maximum avalanche energy of 37mJ. This MOSFET is suitable f...
... Maximum Drain Source Voltage: 100 V Drain Current: 30 A RDS(on): 0.092 ohm Gate Threshold Voltage: 2.25 V Maximum Operating Temperature: 150 °C Minimum Operating Temperature: -55 °C Power Dissipation: 75 W ...
Product Listing: IRF7606TRPBF N-Channel MOSFET Parameters: • Drain-Source Voltage: 100V • Continuous Drain Current: 16A • On-State Resistance (Rds): 0.02Ω • Gate-Source Voltage: ±20V • Gate Charge (Qg): 22nC • ...
12V 100Ah lithium iron battery Product Description: Power Source: Solar Storage Temperature: 14 ~ 122 (-10 ~ 50) Size: L260*W168*H215 mm Internal Impedance: 40m Discharge Temperatur: -4 ~ 140 (-20 ~ 60...
Uniform Light Source Feature: it has uniform illumination, wide light projection. No color difference, no light waves, no filter. It has the features of water-proof, pressure-resistant, shock-proof. No memory e...
Black Probe 1.5m To 6m, For Meeting Small Air Source Heat Pump 7kw-12kw Work At Low Temperature Parameters and Installation MD20D-2 MD30D Heating capacity: 7KW Rated heating capacity: 12KW Water production: 160...
... power operating envelope, precision readback of output current and voltage, output trigger signals as well as the ability to create complex DC transients waveforms to test device behavior to spikes, drops, ...
.... The 1746sc-INO4VI is an I/O module. The module has a backplane current requirement of 120 mA at 5 Volts DC and 250 mA at 24 Volts DC when connected without an external power supply. When connecting the mod...
FDH055N15A MOSFET Power Electronics N-Channel TO-247-3 Package High Current Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @...
FDMS86182 MOSFET Power Electronics N-Channel PowerTDFN-8 600V 7.5A 8.4m RDS Current Switching Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Cont...
... Electronics Transistor for High-Current Switching Applications Single N-Channel 25 V, 73 A Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25 V Current - Continuous Drain (Id) @ 25°C 11.2A (T...
... TO-220-3 Transistor Ultra-Low On-Resistance High Current Capacity FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800 V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Driv...
FDP045N10A-F102 MOSFET Power Electronics TO-220-3 High Current Applications N-Channel FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25...
... Electronics TO-247-3 Transistor for High Current Switching Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 20A (Tc...
... N-Channel MOSFET with High Current and Power Density Capabilities 150V FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta...