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AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage Features •Fast clock rate: 133 MHz • Programmable Mode registers - CAS Latency: 1 or 2 or 3 - BurstLength:1,2,4,8,or ful...
Fully Automatic AC220V Food X Ray Machines Ferromagnetic Random Access Memory Hot Sale Ferromagnetic Random Access Memory Food X-Ray Inspection And Detection Machine X-ray Sundries Screening Machine X-ray Inspe...
... NMO Four generations of low power double data rate synchronous dynamic random access memory Product Usage LPDDR is arguably the most widely used "working memory" memory for mobile devices worldwide. Low Pow...
MR0A08BCYS35 Magnetoresistive Random Access Memory (MRAM) EHHD024A0A41Z DE118-RS-20/6.35 Memory Data Storage FEATURES BENEFITS One memory replaces FLASH, SRAM, EEPROM and MRAM in system for simpler, more effi...
MR0A08BCYS35 Magnetoresistive Random Access Memory (MRAM) EHHD024A0A41Z DE118-RS-20/6.35 Memory Data Storage FEATURES BENEFITS One memory replaces FLASH, SRAM, EEPROM and MRAM in system for simpler, more effi...
...Random Access Memory . Part NO: MCM6246WJ20 Brand: MOTOROLA Mounting Type: Surface Mount Date Code: 03+ Quality Warranty: 3 Months Application: COMPUTER Over View The Northbridge typically handles communica...
...Random Access Memory . Part NO: MCM6341ZP10B Brand: MOTOROLA Mounting Type: Surface Mount Date Code: 03+ Quality Warranty: 3 Months Application: COMPUTER Over View The Northbridge typically handles communic...
...Random Access Memory . Part NO: MCM6341ZP11 Brand: MOTOROLA Mounting Type: Surface Mount Date Code: 03+ Quality Warranty: 3 Months Application: COMPUTER Over View The Northbridge typically handles communica...
IS41LV16100C-50TLI ISSIElectronic Integrated Circuits Dynamic Random Access Memory 1.FEATURES TTL compatible inputs and outputs; tristate I/O Refresh Interval: Auto refresh Mode: 1,024 cycles /16 ms RA...
MT53D512M32D2DS-053 AIT:D IC Electronic Components Dynamic random access memory Product description Part number MT53D512M32D2DS-053 AIT:D is manufactured by MICRON Company and distributed by AYE. As one of the ...
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Functional Description DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer tw...
RAM DDR4 4G 8G 16G 32G ECC 2133 2400 2666 Mhz Random Access Server Memory Certifications Beijing Guangtian Runze Technology Co., Ltd. was established in March 2012, with a registered capital of 20 million yuan....
...Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and...
... data access, low power, and simple interfacing are desired. FEATURES • Organization: 32,768 words × 8 bits • High speed – 10/12/15/20/25/35 ns address access time – 3/3/4/5/6/8 ns output enable access time ...
... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns...
... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns...
.... Specification Of MT41K256M16TW-107 XIT:P Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz Access Time 20 ns Voltage - Supply 1.283V ~ 1.45V Operating Temperature -40°C ~ 95°C...
...advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. Specification Of CY15B102QN-50LHXI Part Number CY15B102QN-50LHXI C...