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...Transistor Cigarette Packer Detector Pocket Transistor Radio The first "prototype" pocket transistor radio was shown by INTERMETALL (a company founded by Herbert Mataré in 1952) at the Internationale Funkaus...
... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dra...
...TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosf...
...Radio RF Power Transistor . Part NO: PTB20147 Brand: Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: ...
...Transistor High Performance Low Noise High Gain HMC536LP2E Power Transistor Product Description: The HMC536LP2E is a GaAs pHEMT MMIC power amplifier which operates between DC and 6 GHz. This amplifier is des...
NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURE...
2SC2690 : Use in audio and radio Frequency power amplifiers NEC general purpose transistors DESCRIPTION The 2SC2690, 2SC2690A are general purpose transistors designed for use in audio and radio frequency power ...
2018 fruit machine jammer for sale emp jammer transistor for Europe here to buy it online jammer slot modificado con el transistor e inductor que le hace falta para q de chicha, no me ago responsable de lo que ...
... Compliance Code: unknown ECCN Code: EAR99 Manufacturer: LRC Leshan Radio Co Ltd Risk Rank: 5.54 Configuration: SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min: 60 V Drain Current-Max (......
NPT1012B GaN IC 28V 25W GaN Power Transistor For Land Mobile Radio [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Pr...
... range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input si...
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SZA5044Z Radio Frequency Amplifiers RF Amplifier IRFHM9331TRPBF MSP430FR2100IPW16R Wireless RF Integrated Circuits Product Description RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transi...
6N60 Z 6.2A 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resist...
How to contact us? Email: chrissy@ladaskytech.com Phone/wechat/whatsapp: +86 13556865442 Product Parameters GaN enables high efficiency and high output. The radio frequency and monitoring technical indicators o...
Good quality Electronic Component provider from ChinaGS Electronics, Product Details: AD8361ARMZ Introduction: The AD8361ARMZ is a high-performance logarithmic amplifier designed by Analog Devices. This preci...
BLF174XRS N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF174XRS #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;co...
... as transistor radio medium wave antenna coil. Single layer winding is a kind of winding with only one effective side of coil embedded in each stator slot, so its total ......