Total 438 products for what is indium Manufacture & Suppliers

• 2 Inch Mg-Doped GaN Thin Films On Sapphire Substrates For GaN Power Device

  

  ...gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50% shorter epitaxy ......

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• 2 Inch Si-Doped GaN Epitaxial Materials On Sapphire For Gallium Nitride Devices

  

  ... consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Te...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• Plane (0001) 4 Inch Semi-Insulating GaN Epitaxial Layer On Sapphire Substrates

  

  ... consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Te...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• 4 Inch Mg-Doped GaN Material On C(0001) Sapphire Substrates

  

  ... consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Te...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• 4 Inch Undoped GaN On Flat Or Patterned Sapphire Substrates For Visible LEDs

  

  ...gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50% shorter epitaxy ......

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• 4 Inch Si-Doped GaN On Sapphire Substrates For Visible Light-Emitting Diodes

  

  ... consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Te...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• 2 Inch Semi-Insulating GaN Wafer On Sapphire Substrates By MOCVD

  

  ... consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Te...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• P Type , VGF InP Wafer With Single Or Double Side Polished , 2”, Test Grade

  

  P Type , VGF InP Wafer With Single Or Double Side Polished , 2���, Test Grade PAM-XIAMEN manufactures high purity single crystal Indium Phosphide Wafers for optoelectronics applications. Our standard wafer diamet...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• Semi-Insulating , InP Wafer , 3”, Prime Grade, For Electronic And Photonic Devices

  

  ...InP Wafer , 3”, Prime Grade, For Electronic And Photonic Devices PAM-XIAMEN manufactures high purity single crystal Indium Phosphide Wafers for optoelectronics applications. Our standard wafer diameters rang...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• Semi-Insulating , InP Substrate , 2”, Test Grade -Powerway Wafer

  

  Semi-Insulating , InP Substrate , 2���, Test Grade -Powerway Wafer PAM-XIAMEN manufactures high purity single crystal Indium Phosphide Wafers for optoelectronics applications. Our standard wafer diameters range f...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• N Type , InP Substrate With (100),(111) Or (110) Orientation , 3”, Dummy Grade

  

  N Type , InP Substrate With (100),(111) Or (110) Orientation , 3���, Dummy Grade PAM-XIAMEN manufactures high purity single crystal Indium Phosphide Wafers for optoelectronics application. Our standard wafer diam...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• P Type , Single Crystal InAs Substrate , 3”, Prime Grade

  

  P Type , Single Crystal InAs Substrate , 3”, Prime Grade PAM-XIAMEN manufactures high purity single crystal Indium arsenide Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 ...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• P Type , Zn-doped Single Crystal InAs Wafer , 2”, Test Grade

  

  P Type , Zn-doped Single Crystal InAs Wafer , 2”, Test Grade PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready ...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• Undoped InAs Semiconductor Wafer , 3”, Dummy Grade

  

  Undoped InAs Semiconductor Wafer , 3”, Dummy Grade PAM-XIAMEN manufactures high purity single crystal Indium arsenide Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 mm (1 ...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• Undoped InAs Semiconductor Wafer , 3”, Prime Grade

  

  Undoped InAs Semiconductor Wafer , 3”, Prime Grade PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechani...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• Undoped InAs Substrate , 2”, Prime Grade , Epi Ready -InAs Wafer Manufacturer

  

  Undoped InAs Substrate , 2���, Prime Grade , Epi Ready -InAs Wafer Manufacturer PAM-XIAMEN manufactures high purity single crystal Indium arsenide Wafers for optoelectronics applications. Our standard wafer diame...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• N Type, InAs Wafer, 2”,Prime Grade,Epi Ready-Semiconductor Wafer Manufacturing

  

  N Type, InAs Wafer, 2���,Prime Grade,Epi Ready-Semiconductor Wafer Manufacturing PAM-XIAMEN manufactures high purity single crystal Indium arsenide Wafers for optoelectronics applications. Our standard wafer diam...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor

  

  N Type , InSb Substrate , 3���, Dummy Grade -Compound Semiconductor PAM-XIAMEN manufactures high purity single crystal InSb(Indium Antimonide) Wafers for photodiodes or photoelectromagnetic device, Magnetic field...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• Undoped InSb Wafer , 2”, Polished Wafer , Epi Ready

  

  ...InSb Wafer, 2”, Polished Wafer, Epi Ready PAM-XIAMEN manufactures high purity single crystal InSb(Indium Antimonide) Wafers for photodiodes or photoelectromagnetic device, Magnetic field sensors using magnet...

  XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

  Fujian,China

  Active Member

  Add to cart

  Contact Supplier

• Adult / Children Mercury Fever Thermometer For Body Temperature

  

  ... and -0.15°C, 41°C+0.1°C and -0.15°C Storage temperature: -5°C-30°C Operating temperature: -5°C-42°C Description:The mixture of gallium and indium insteads of mercury,nontoxic,no batteries needed • Measuring...

  Beijing Global Dowin Technology CO.,LTD

  China

  Verified Supplier

  Add to cart

  Contact Supplier