Undoped InAs Semiconductor Wafer , 3”, Dummy Grade
PAM-XIAMEN manufactures high purity single crystal Indium arsenide
Wafers for optoelectronics applications. Our standard wafer
diameters range from 25.4 mm (1 inch) to 100 mm (6 inches) in size;
wafers can be produced in various thicknesses and orientations with
polished or unpolished sides and can include dopants. PAM-XIAMEN
can produce wide range grades: prime grade, mechanical grade,test
grade, dummy grade, technical grade, and optical grade. PAM-XIAMEN
also offers materials to customer specifications by request, in
addition to custom compositions for commercial and research
applications and new proprietary technologies.
3" InAs Wafer Specification
| Item | Specifications |
| Dopant | Undoped |
| Conduction Type | N-type |
| Wafer Diameter | 3" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 600±25um |
| Primary Flat Length | 22±2mm |
| Secondary Flat Length | 11±1mm |
| Carrier Concentration | 5x1016cm-3 |
| Mobility | ≥2x104cm2/V.s |
| EPD | <5x104cm-2 |
| TTV | <12um |
| BOW | <12um |
| WARP | <15um |
| Laser marking | upon request |
| Suface finish | P/E, P/P |
| Epi ready | yes |
| Package | Single wafer container or cassette |
What is InAs wafer?
Indium arsenide is a kind of III-V compound semiconductor material
composed of indium and arsenic.It is a silver gray solid with a
sphalerite crystal structure at room temperature. The lattice
constant is 0.6058nm, and the density is 5.66g/cm (solid) and
5.90g/cm (liquid at melting point). The band structure is a direct
transition with a band gap (300K) of 0.45ev. the dissociation
pressure of as is only 0.033mpa, and the single crystal can be
grown from the melt at atmospheric pressure. The commonly used
methods are Hb and LEC. InAs is a kind of semiconductor material
which is difficult to purify. The residual carrier concentration is
higher than l × 10 / cm, the room temperature electron mobility is
3.3 × 10 ^ 3cm / (V · s), and the hole mobility is 460cm / (V · s).
The effective segregation coefficient of sulfur in In and As is
close to 1, so it is used as n-type dopant to improve the
uniformity of longitudinal carrier concentration distribution. For
industrial InAs (s) single crystal, n ≥ 1 × 10 / cm3, μ ≤ 2.0 ×
10cm / (V · s), EPD ≤ 5 × 10 / cm3.
InAs crystal has high electron mobility and mobility ratio (μ E / μ
H = 70), low magneto resistance effect and low resistance
temperature coefficient. It is an ideal material for manufacturing
Hall devices and magneto resistance devices. The emission
wavelength of InAs is 3.34 μ M. in GaAs B, InAsPSb and inasb
multiple epitaxial materials with lattice matching can be grown on
InAs substrate. Lasers and detectors for optical fiber
communication at 2-4 μ M band can be manufactured.
Electrical properties of InAs Wafer
Basic Parameters
| Breakdown field | ≈4·104 V cm-1 |
| Mobility of electrons | ≤4·104 cm2V-1s-1 |
| Mobility of holes | ≤5·102 cm2 V-1s-1 |
| Diffusion coefficient of electrons | ≤103 cm2s-1 |
| Diffusion coefficient of holes | ≤13 cm2 s-1 |
| Electron thermal velocity | 7.7·105 m s-1 |
| Hole thermal velocity | 2·105 m s-1 |
Mobility and Hall Effect
At T = 300 K the electron Hall factor in pure n-InAs rH ~1.3.
 | Hole Hall mobility (R·σ) versus temperature for different acceptor
densities.
Hole concentration at 300 K po (cm-3): 1. 5.7·1016; 2. 2.6·1017; 3.
4.2·1017; 4. 1.3·1018.
|
 | Hall coefficient versus temperature for different acceptor
densities.
Hole concentration at 300 K po (cm-3): 1. 5.7·1016; 2. 2.6·1017; 3.
4.2·1017; 4. 1.3·1018.
|
Transport Properties in High Electric Fields
 | Steady state field dependence of the electron drift velocity, 300
K,
F || (100). Theoretical calculation
|
 | Field dependence of the electron drift velocity at different
transverse magnetic fields for long (microsecond) pulses.
Experimental results, 77 K
Magnetic field B(T): 1. 0.0; 2. 0.3; 3. 0.9; 4. 1.5.
|
 | Field dependence of the electron drift velocity, 77 K.
Solid lines show results of theoretical calculation for different
non-parabolicity
α (eV-1): 1. 2.85; 2. 2.0; 3. 1.5.
Points show experimental results for very short (pico-second
pulses)
|
Impact Ionization
 | The dependence of ionization rates for electrons αi and holes βi
versus 1/F, T =77K
|
For electrons:
αi = αoexp(-Fno/ F)
αo = 1.8·105 cm-1;
Fno = 1.6·105 V cm-1 (77 K)
For holes:
βi = βoexp(-Fpo/ F)
At 77 K
| 1.5·104 V cm-1 < F < 3·104 V cm-1 | 3·104 V cm-1 < F < 6·104 V cm-1 |
| βo = 4.7·105 cm-1; | βo = 4.5·106 cm-1; |
| Fpo = 0.85·105 V cm-1. | Fpo = 1.54·105 V cm-1 |
 | Generation rate g versus electric field for relatively low fields,
T = 77 K.
Solid line shows result of calculation.
Experimental results: open and full circles -undoped InAs,
open triangles - compensated InAs.
|
 | Breakdown voltage and breakdown field versus doping density for an
abrupt p-n junction, 77 K. |
Recombination Parameters
| Pure n-type material (no =2·10-15cm-3) |
| The longest lifetime of holes | τp ~ 3·10-6 s |
| Diffusion length Lp | Lp ~ 10 - 20 µm. |
| Pure p-type material |
| The longest lifetime of electrons | τn ~ 3·10-8 s |
| Diffusion length Ln | Ln ~ 30 - 60 µm |
Characteristic surface recombination rates (cm s-1) 102 - 104.
Radiative recombination coefficient
| 77 K | 1.2·10-9 cm3s-1 |
| 298 K | 1.1·10-10 cm3s-1 |
Auger coefficient
Are You Looking for an InAs substrate?
PAM-XIAMEN is proud to offer indium phosphide substrate for all
different kinds of projects. If you are looking for InAs wafers,
send us enquiry today to learn more about how we can work with you
to get you the InAs wafers you need for your next project. Our
group team is looking forward to providing both quality products
and excellent service for you!
