Undoped InAs Substrate , 2”, Test Grade -Indium Arsenide Wafer
Supplier
PAM-XIAMEN provides single crystal InAs(Indium arsenide) wafer for
infrared detectors, photovoltaic photodiodes detectors, diode
lasers in lower noise or higher-power applications at room
temperature. in diameter up to 4 inch. Indium Arsenide ( InAs )
crystal is formed by two elements , Indium and Arsenide , growth by
Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InAs
wafer is is similar to gallium arsenide and is a direct bandgap
material.
Indium arsenide is sometimes used together with indium phosphide.
Alloyed with gallium arsenide it forms indium gallium arsenide - a
material with band gap dependent on In/Ga ratio, a method
principally similar to alloying indium nitride with gallium nitride
to yield indium gallium nitride. PAM-XIAMEN can provide epi ready
grade InAs wafer for your MOCVD & MBE epitaxial application .Please
contact our engineer team for more wafer information.
2" InAs Wafer Specification
| Item | Specifications |
| Dopant | Undoped |
| Conduction Type | N-type |
| Wafer Diameter | 2" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 500±25um |
| Primary Flat Length | 16±2mm |
| Secondary Flat Length | 8±1mm |
| Carrier Concentration | 5x1016cm-3 |
| Mobility | ≥2x104cm2/V.s |
| EPD | <5x104cm-2 |
| TTV | <10um |
| BOW | <10um |
| WARP | <12um |
| Laser marking | upon request |
| Suface finish | P/E, P/P |
| Epi ready | yes |
| Package | Single wafer container or cassette |
What is the InAs Process?
InAs wafers must be prepared prior to device fabrication. To start,
they must be completely cleaned to remove any damage that might
have occurred during the slicing process. The wafers are then
Chemically Mechanically Polished/Plaranrized (CMP) for the final
material removal stage. This allows for the attainment of
super-flat mirror-like surfaces with a remaining roughness on an
atomic scale. After that is completed, the wafer is ready for
fabrication.
Band structure and carrier concentration of InAs Wafer
Basic Parameters
| Energy gap | 0.354 eV |
| Energy separation (EΓL) between Γ and L valleys | 0.73 eV |
| Energy separation (EΓX) between Γ and X valleys | 1.02 eV |
| Energy spin-orbital splitting | 0.41 eV |
| Intrinsic carrier concentration | 1·1015 cm-3 |
| Intrinsic resistivity | 0.16 Ω·cm |
| Effective conduction band density of states | 8.7·1016 cm-3 |
| Effective valence band density of states | 6.6·1018 cm-3 |
 | Band structure and carrier concentration of InAs.
Important minima of the conduction band and maxima of the valence
band.
Eg= 0.35 eV
EL= 1.08 eV
EX= 1.37 eV
Eso = 0.41 eV |
Temperature Dependences
Temperature dependence of the direct energy gap
Eg = 0.415 - 2.76·10-4·T2/(T+83) (eV),
where T is temperature in degrees K (0 <T < 300).
Effective density of states in the conduction band
Nc≈1.68·1013·T3/2 (cm-3).
Effective density of states in the valence band
Nv≈ 1.27·1015·T3/2(cm-3).
 | The temperature dependences of the intrinsic carrier concentration. |
 | Fermi level versus temperature for different concentrations of
shallow donors and acceptors. |
Dependences on Hydrostatic Pressure
Eg≈Eg(0) + 4.8·10-3P (eV)
EL≈ EL(0) + 3.2·10-3P (eV)
where P is pressure in kbar
Energy Gap Narrowing at High Doping Levels
 | Energy gap narrowing versus donor (Curve 1) and acceptor (Curve 2 )
doping density.
Curves are calculated according
Points show experimental results for n-InAs |
For n-type InAs
ΔEg = 14.0·10-9·Nd1/3 + 1.97·10-7·Nd1/4 + 57.9·10-12·Nd1/2 (eV)
For p-type InAs
ΔEg = 8.34·10-9·Na1/3 + 2.91·10-7·Na1/4 + 4.53·10-12·Na1/2 (eV)
Effective Masses
Electrons:
 | Electron effective mass versus electron concentration
|
| For Γ-valley | mΓ = 0.023mo |
Nonparabolicity:
E(1+αE) = h2k2/(2mΓ) | α = 1.4 (eV-1) |
| In the L-valley effective mass of density of states | mL=0.29mo |
| In the X-valley effective mass of density of states | mX=0.64mo |
Holes:
| Heavy | mh = 0.41mo |
| Light | mlp = 0.026mo |
| Split-off band | mso = 0.16mo |
Effective mass of density of states mv = 0.41mo
Donors and Acceptors
Ionization energies of shallow donors
≥ 0.001(eV): Se, S, Te, Ge, Si, Sn, Cu
Ionization energies of shallow acceptors, eV
| Sn | Ge | Si | Cd | Zn |
| 0.01 | 0.014 | 0.02 | 0.015 | 0.01 |
Are You Looking for an InAs Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including
InAs wafers, as we have been doing it for almost 30 years! Enquire
us today to learn more about the wafers that we offer and how we
can help you with your next project. Our group team is looking
forward to providing both quality products and excellent service
for you!
