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...high performance. As a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), this product excels in switching and amplification tasks, making it an essential component in power ......
Product Description: The High Power MOSFET is a cutting-edge semiconductor device designed to meet the demanding requirements of modern electronic applications. As a high power n channel MOSFET, this device exc...
... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dra...
... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extreme...
... extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an e...
...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an ex...
Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use IRLR7843PbF IRLU7843PbF Description Power MOSFET Selection for Non-Isolated DC/DC Converters Absolute Maximum Ratings Paramet...
...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combine...
IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output ch...
IR2130STRPBF 3-PHASE BRIDGE DRIVER high voltage, high speed power MOSFET and IGBT driver Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side ...
...Mosfet Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 ...
MOSFET Power Electronics SI2347DS-T1-BE3 High Performance Power Switching Product Listing: SI2347DS-T1-BE3 - N-Channel Power MOSFET Features: - Low On-Resistance - Low Input Capacitance - Low Gate Charge - High...
MOSFET Power Electronics SQ2319ADS-T1-BE3 High Performance Low On Resistance Features: • N-Channel Enhancement Mode MOSFET • Low On-Resistance RDS(on) • Low Gate Threshold Voltage • High Speed Switching • RoHS ...
... (ID) of 9.4A Low On-Resistance (RDS(on)) of 0.27 ohms Fast switching speed TO-252 (DPAK) package RoHS compliant This MOSFET is ideal for use in power conversion circuits, motor control, and other high-curre...
...: Product Name: IRFB7430PBF Manufacturer: Infineon Technologies Product Category: Power MOSFETs Description: The IRFB7430PBF is a 100V, single N-channel HEXFET power MOSFET designed for use in high-performan...
...IRF640NSTRLPBF MOSFET transistor is a high-performance N channel device with a voltage rating of 200 V and a maximum current rating of 18 A. It features a low on-resistance of 0.077 ohm and is available in a...
IRF1405PBF MOSFET Power Electronics Perfect for High Current Applications Parameters: • Type: N-Channel MOSFET • Drain-Source Voltage: 100V • Drain Current: 14A (Tc=25℃) • Gate-Source Voltage: +/-20V • Power Di...
IRF1407PBF High Performance MOSFET Power Electronics for Improved Efficiency and Reliability Product Listing: IRF1407PBF MOSFET Drain-Source Voltage: 100V Drain Current: 72A RDS On Resistance: 4.5 mOhm ...
...MOSFET Power Electronics High Quality Low Power Dissipation Excellent Switching Performance Product Features: • Low on-resistance • High peak current capability • Low gate charge • High breakdown voltage • L...