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... substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made according to SEMI standard( the...
... substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made according to SEMI standard( the...
... substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made according to SEMI standard( the...
... substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made according to SEMI standard( the...
... substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made according to SEMI standard( the...
... substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made according to SEMI standard( the...
... substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made according to SEMI standard( the...
... silicon substrate to compound semiconductor, PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon s...
...compound semiconductor, PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishin...
...compound semiconductor, PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishin...
... substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made according to SEMI standard( the...
...compound semiconductor, PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishin...
... substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made according to SEMI standard( the...
... substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made according to SEMI standard( the...
... synthetic compound.Black,Static conducting tube. Reinforcement:high tensile textile cord. Cover:SBR.cover is also static dissipating. Design factor:3:1 Temperature:-20 to 70 degree Application: Delivery qua...
...:SBR.cover is also static dissipating. Design factor:3:1 Temperature:-20 to 70 degree Application: Delivery quartz and metal sand, polishing, ridding rust on metal surface and spraying cement. it is manufact...
...compound.Black,Static conducting tube. Reinforcement:high tensile textile cord. Cover:SBR.cover is also static dissipating. Temperature:-20 to 70 degree Design factor:3:1 Temperature:-20 to 70 degree Applica...
... synthetic compound.Black,Static conducting tube. Cover:SBR.cover is also static dissipating. Reinforcement:high tensile textile cord. Design factor:3:1 Temperature:-20 to 70 degree Application: Delivery qua...
...,BR,SBR synthetic compound.Black,Static conducting tube. Cover:SBR.cover is also static dissipating. Reinforcement:high tensile textile cord. Design factor:3:1 Application: Delivery quartz and metal sand, po...
... equipment for organic-inorganic compound fertilizer granulation, which first extrude materials into certain shape, then take polish and further granulation, with advantages of high balling rate. Specificati...