6 Inch CZ Prime Silicon Wafer With One Side Sputtering Cr / Au Layer Thickness 10nm/50nm 6"

6 Inch CZ Prime Silicon Wafer With One Side Sputtering Cr / Au Layer Thickness 10nm/50nm 6"
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to compound semiconductor, PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made according to SEMI standard( the Semiconductor Equipment and Materials International standards). We also work ultra thin wafer, silicon oxide wafer SiO2 thin film, silicon nitride wafer Si3N4 thin film, metallization on silicon substrate, and epi wafer service.

6inch CZ Prime Silicon Wafer With One Side Sputtering Cr/Au Layer Thickness 10nm/50nm 6"

How is Silicon Wafer Made?
Growth of Silicon Ingot: single crystal silicon wafers grow via the Czochralski (CZ) and FZ method,CZ ingot growth requires chunks of virgin polycrystalline silicon, depending on the dopant, the ingot becomes a P or N type ingot (boron: P type; Phosphorus, antimony, arsenic: N type).

Slicing:Once the ingot is fully-grown, it is ground to a rough size diameter that is slightly larger than the target diameter of the final silicon wafer. The ingot has a notch or flat cut into it, the ingot proceeds to slicing. The diamond edge saw helps to minimize damage to the wafers, thickness variation, and bow and warp defects.
After the wafers have been sliced, the lapping process begins.
Cleaning:The final and most crucial step in the manufacturing process is polishing the wafer. This process takes place in a clean room. Clean rooms have a rating system that ranges from Class 1 to Class 10,000. These particles are not visible to the naked eye and in an uncontrolled atmosphere, the workers must wear clean room suits that cover their body from head to toe and do not collect or carry any particles.
Polishing:Most prime grade silicon wafers go through 2-3 stages of polishing, using progressively finer slurries or polishing compounds. The polishing process occurs in two steps, which are stock removal and final chemical mechanical polish (CMP). Both processes use polishing pads and polishing slurry. The stock removal process removes a very thin layer of silicon and is necessary to produce a wafer surface that is damage-free. After polishing, the silicon wafers proceed to a final cleaning stage that uses a long series of clean baths. This process removes surface particles, trace metals, and residues. Oftentimes a backside scrub is done to remove even the smallest particles.
Packaging:Once the wafers complete the final cleaning step, engineers sort them by specification and inspect them under high intensity lights or laser-scanning systems. This detects unwanted particles or other defects that may have occurred during fabrication. All wafers that meet the proper specifications are packaged in cassettes and sealed with tape. The wafers ship in a vacuum-sealed plastic bag with an airtight foil outer bag. This ensures that no particles or moisture enters the cassette upon leaving the clean room.

Are You Looking for an Silicon Wafer?
PAM-XIAMEN is your go-to place for semiconductor wafers, including Silicon wafers, as we have been doing it for almost 30 years! Send us enquiry to learn more about the wafers that we offer and how we can help you with your next project. Our group team can give you technology support. send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.