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..., a short circuit withstand time of 10s, and low VCE(SAT). Its positive temperature coefficient in VCE(SAT) facilitates easy parallel switching. Applications include frequency converters and motor drives.Pro...
..., UPS systems, and welding machines. It features low Vce(sat) with Trench technology, low switching losses, a positive temperature coefficient for Vce(sat), and high short-circuit capability. The module incl...
..., high ruggedness, and stable temperature behavior. Key advantages include a short circuit withstand time of 10s, low VCE(SAT), and easy parallel switching capability due to a positive temperature coefficien...
... low Vce(sat) with Trench technology, low switching losses (especially Eoff), a positive temperature coefficient for Vce(sat), high short circuit capability (10s), an integrated ultra-fast & soft recovery an...
...high-performance IGBT module designed for demanding industrial applications. It features low VCE(sat) with Trench technology, positive temperature coefficient for VCE(sat), and high short circuit capability....
...high-performance IGBT module designed for power electronics applications. It features low Vce(sat) with Trench technology, a positive temperature coefficient for Vce(sat), and an integrated fast & soft recov...
... features low Vce(sat) with Trench technology, low switching losses (especially Eoff), a positive temperature coefficient for Vce(sat), high short circuit capability (10us), and includes an ultra-fast & soft...
..., UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (especially Eoff), a positive temperature coefficient for Vce(sat), high short circuit capability (10us), an...
...-switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and includes an ultra-fast & soft recovery anti-p...
...) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for Vce(sat), and high short circuit capability (10s). The module includes an ultra-fast and soft recove...
...soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and includes an ultra-fast & soft recovery an...
... IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an int...
... current (ICM = 12A). It features low saturation voltage (VCE(SAT) < 40mV @1A) and low equivalent on-resistance (RCE(SAT) = 24m). This device is AEC-Q101 qualified, totally lead-free, and RoHS compliant, mak...
Product Overview The ZXTN25100DFH is a 100V NPN low saturation transistor in a SOT23 package. It offers high gain, low saturation voltage (VCE(sat) < 95mV @ 1A), and an RCE(sat) of 80m. This device is suitable ...
...a 100V PNP medium power transistor in a SOT23 package. It offers high peak current capability, low VCE(SAT), and a low RCE(SAT), making it suitable for various applications including MOSFET and IGBT gate dri...
... of -4A, with a low saturation voltage (VCE(sat) < -220mV @ -1A) and a low equivalent on-resistance (RCE(SAT) = 163m). This device is characterized for high current gain hold-up up to -3A and is available in...
... low saturation voltage (VCE(sat) < 100mV @ 1A) and a low equivalent on-resistance (RCE(sat) = 44m). The transistor offers high gain hold-up with hFE specified up to 10A. It is available in lead-free, RoHS c...
... a low saturation voltage (VCE(sat) < -200mV @ -1A) and a low equivalent on-resistance (RCE(SAT) = 97m). The transistor is designed for applications requiring high current gain hold-up and is complementary t...
...hFE, VCE(SAT), and VBE(SAT), providing excellent performance consistency. Housed in a compact SOT26 (SC74R) package, it occupies half the footprint of two individual SOT23 transistors, ......
... offers a continuous collector current of 2A, low saturation voltage (VCE(sat) < 200mV @ 1A), and a low equivalent on-resistance (RCE(sat) = 68m). This device is suitable for MOSFET gate driving, DC-DC/DC-AC...