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...fast switching speeds for improved efficiency and power density - High-voltage, high-current and low-Vce(sat) capability - Suitable for a wide range of power supply and switching applications - Rugged, relia...
...Max. Collector Current (Icm): 80A • Gate Emitter Voltage (VGE): ±20V • Collector Emitter Saturation Voltage (Vce(sat)): 2.1V@25A • Operating Frequency (f): up to 20kHz • Switching Time (t): 25ns • Thermal Re...
... Number of IGBTs: 1 Number of Diode: 1 Collector-Emitter Voltage (Vce): 600V Collector-Emitter Saturation Voltage (Vce(sat)): 1.5V Continuous Collector Current (Ic): 50A Collector-Emitter On Voltage (Vce(on)...
...-circuit capability. Package Type: TO-247 Collector-Emitter Voltage (Vce): 600V Collector-Emitter Saturation Voltage (Vce sat): 3.1V Continuous...
IRG4PH50SPBF IGBT Power Module High Efficiency Low Loss and Reliable Performance Product Listing: IRG4PH50SPBF IGBT Power Module Product Features: 800V/50A IGBT Power Module Low VCE(sat) and High Speed Swit...
... range has premium controllability for the better EMI while switching losses are lower than the former technologies. Specification Of IKW40N65ET7XKSA1 Part Number IKW40N65ET7XKSA1 VCE(sat) 1.35 V VCE max...
Electronic Integrated Circuits IKQ50N120CH7XKSA1 1200V 71A Transistors Product Description Of IKQ50N120CH7XKSA1 IKQ50N120CH7XKSA1 has smooth switching characteristics, a very low VCE(sat), 1.30V (typ.), and a v...
... IXYX110N120C4 is high-gain IGBTs optimized for ultra-low conduction losses VCE(sat), and for switching frequency of up to 5kHz. Specification Of IXYX110N120C4 Part Number IXYX110N120C4 Voltage - Collector E...
... high gain boosts surge current capabilityand positive thermal co-efficient of VCE(sat) simplifies paralleling. Specification Of IXYN110N120C4 Part Number IXYN110N120C4 Current - Collector Cutoff (Max) 50 µA...
... VCE(sat), and for switching frequency of up to 5kHz. Thin wafer technology and improved processes enable a low gate charge QG, hence, low gate current ......
... IXYX50N170C‘'s high gain boosts surge current capabilityand positive thermal co-efficient of VCE(sat) simplifies paralleling. Low thermal resistance of Rth(j-c) eases thermal related design issues. Specific...
FCX605TA 20V NPN SILICON HIGH VOLTAGE DARLICM GROUPON TRANSISTOR DESCRIPTION This new NPN DarliCM GROUPon transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to g...
... Features • Adoption of MBIT process • Large current capacitance (IC=--10A) • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) • High-speed switching (tf=22ns(typ.)) A part of stock list ...
BD244B, BD244C* (PNP) Complementary Silicon Plastic Power Transistors Features •Collector - Emitter Saturation Voltage - VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc •Collector Emitter Sustaining Voltage - VCEO(sus)...
... 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC...
FGH60N60SFD 600V, 60A Field Stop IGBT Features High current capability Low saturation voltage: VCE(sat) =2.3V @ IC = 60A High input impedance Fast switching RoHS compliant Applications Induction Hea...
STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT General Features TYPE VCES VCE(sat) (Max) @25°C IC @100°C STGW20NC60VD 600 V < 2.5 V 30 A ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DI...
2SA1761 Power Mosfet Transistor Electronics Components Chip IC Electronics Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 0.5 A) High-speed switching: tstg = 0.2 s (typ.) Compl...
... Applications Power Switching Applications • High DC current gain: hFE (1) = 100~320 • Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA) • Complementary to 2SA1298 A part of stock lis...
... (sat) = −0.4 V (max) (IC = −500 mA, IB = −20 mA) • Suitable for driver stage of small motor • Complementary to 2SC3265 • Small ......