SIHP22N60E-GE3 MOSFET Power Electronics High Performance High Efficiency Switching Solutions
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Package / Case | | |
Base Product Number | |
Product Description:
The SIHP22N60E-GE3 is a 600V N-Channel Enhanced MOSFET designed to
deliver high performance in power electronic applications. The
device is designed utilizing the latest in advanced packaging and
process technologies, to provide superior switching performance and
low on-resistance. This MOSFET features a low gate charge and fast
body diode for improved efficiency and switching performance.
Features:
• Low On-Resistance: RDS(on) = 0.048Ω
• Low Gate Charge: Qg = 4.4nC
• Fast Body Diode
• High Power Density
• Enhanced Ruggedness
• Avalanche Rated
• RoHS Compliant
Applications:
• Switch-Mode Power Supplies
• Uninterruptible Power Supplies
• Automotive Inverters
• Motor Drives
• AC-DC and DC-DC Converters
Why buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components
.Our branches office include China, Hong Kong, Sigapore , Canada .
Offer business, service, resourcing and information for our global
member.
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to our customers all over the world with speed and precision.
How to buy >>>
• Contact us by email & sent your inquire with your Transport
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Service >>>
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replied. The products were tested by some devices or software, we
ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe
transportation service to global buyer.
