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FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

    Buy cheap FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors from wholesalers
     
    Buy cheap FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors from wholesalers
    • Buy cheap FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors from wholesalers

    FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

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    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : FMMT591
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    FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

    SOT-23 Plastic-Encapsulate Transistors FMMT591 TRANSISTOR (PNP)

    FEATURE

    Low equivalent on-resistance


    Marking :591


    MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

    SymbolParameterValueUnit
    VCBOCollector-Base Voltage-80V
    VCEOCollector-Emitter Voltage-60V
    VEBOEmitter-Base Voltage-5V
    ICCollector Current-1A
    ICMPeak Pulse Current-2A
    PCCollector Power Dissipation250mW
    RΘJAThermal Resistance From Junction To Ambient500℃/W
    TjJunction Temperature150
    TstgStorage Temperature-55~+150




    ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

    ParameterSymbolTest conditionsMinTypMaxUnit
    Collector-base breakdown voltageV(BR)CBOIC=-100μA, IE=0-80V
    Collector-emitter breakdown voltageV(BR)CEO1IC=-10mA, IB=0-60V
    Emitter-base breakdown voltageV(BR)EBOIE=-100μA, IC=0-5V
    Collector cut-off currentICBOVCB=-60V, IE=0-0.1μA
    Emitter cut-off currentIEBOVEB=-4V, IC=0-0.1μA



    DC current gain

    hFE(1)VCE=-5V, IC=-1mA100
    hFE(2) 1VCE=-5V, IC=-500mA100300
    hFE(3) 1VCE=-5V, IC=-1A80
    hFE(4) 1VCE=-5V, IC=-2A15

    Collector-emitter saturation voltage

    VCE(sat)1 1IC=-500mA, IB=-50mA-0.3V
    VCE(sat)2 1IC=-1A, IB=-100mA-0.6V
    Base-emitter saturation voltageVBE(sat) 1IC=-1A, IB=-100mA-1.2V
    Base-emitter voltage

    1

    VBE

    VCE=-5V, IC=-1A-1V
    Transition frequencyfTVCE=-10V,IC=-50mA,,f=100MHz150MHz
    Collector output capacitanceCobVCB=-10V,f=1MHz10pF



    Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.



    Typical Characterisitics





    Package Outline Dimensions

    SymbolDimensions In MillimetersDimensions In Inches
    MinMaxMinMax
    A0.9001.1500.0350.045
    A10.0000.1000.0000.004
    A20.9001.0500.0350.041
    b0.3000.5000.0120.020
    c0.0800.1500.0030.006
    D2.8003.0000.1100.118
    E1.2001.4000.0470.055
    E12.2502.5500.0890.100
    e0.950 TYP0.037 TYP
    e11.8002.0000.0710.079
    L0.550 REF0.022 REF
    L10.3000.5000.0120.020
    θ



































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