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High Purity 99.5% Titanium Sputtering Target For Pvd Coating System

    Buy cheap High Purity 99.5% Titanium Sputtering Target For Pvd Coating System from wholesalers
     
    Buy cheap High Purity 99.5% Titanium Sputtering Target For Pvd Coating System from wholesalers
    • Buy cheap High Purity 99.5% Titanium Sputtering Target For Pvd Coating System from wholesalers
    • Buy cheap High Purity 99.5% Titanium Sputtering Target For Pvd Coating System from wholesalers
    • Buy cheap High Purity 99.5% Titanium Sputtering Target For Pvd Coating System from wholesalers

    High Purity 99.5% Titanium Sputtering Target For Pvd Coating System

    Ask Lasest Price
    Brand Name : JINXING
    Model Number : Titanium Sputtering Target
    Certification : ISO 9001
    Price : 20~200USD/kg
    Payment Terms : L/C, D/A, D/P, T/T, Western Union
    Supply Ability : 100000kgs/M
    Delivery Time : 10~25 work days
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    High Purity 99.5% Titanium Sputtering Target For Pvd Coating System

    Titanium Sputtering Target 99.5%, 99.95% D100x40mm , D65x6.35mm

    Purity is the main performance index of the target material, because the purity of the target material has a great influence on the performance of the film.


    Main performance requirements of target material:


    Purity is the main performance index of the target material, because the purity of the target material has a great influence on the performance of the film. However, in practical application, the purity requirements of the target are not the same. For example, with the rapid development of microelectronics industry, the size of silicon chip has been developed from 6 ", 8" to 12 ", while the wiring width has been reduced from 0.5um to 0.25um, 0.18um or even 0.13um. Previously, 99.995% of the target purity can meet the process requirements of 0.35um IC, while the preparation of 0.18um line requires 99.999% or even 99.9999% of the target purity.


    Impurities in the target solid and oxygen and water vapor in the pores are the main pollution sources. Different target materials have different requirements for different impurity content. For example, pure aluminum and aluminum alloy targets for semiconductor industry have different requirements for alkali metal content and radioactive element content.


    In order to reduce the porosity in the target solid and improve the properties of sputtered films, the target is usually required to have a high density. The density of the target not only affects the sputtering rate, but also affects the electrical and optical properties of the film. The higher the target density is, the better the film performance is. In addition, increasing the density and strength of the target can make the target better withstand the thermal stress in the sputtering process. Density is also the key performance index of the target.


    Generally, the target material is polycrystalline structure, and the grain size can be from micrometer to millimeter. For the same kind of target, the sputtering rate of the target with small grain size is faster than that of the target with large grain size, while the thickness distribution of the film deposited by the target with small grain size difference (uniform distribution) is more uniform.


    Titanium Sputtering Target , Titanium Sputtering Target 99.95%

    are available in varying sizes

    D100x40mm , D65x6.35mm etc


    Product NameElementPurirtyMelting Point Density (g/cc)Available Shapes
    High Pure SliverAg4N-5N96110.49Wire, Sheet, Particle, Target
    High Pure AluminumAl4N-6N6602.7Wire, Sheet, Particle, Target
    High Pure GoldAu4N-5N106219.32Wire, Sheet, Particle, Target
    High Pure BismuthBi5N-6N271.49.79Particle, Target
    High Pure CadmiumCd5N-7N321.18.65Particle, Target
    High Pure CobaltCo4N14958.9Particle, Target
    High Pure ChromiumCr3N-4N18907.2Particle, Target
    High Pure CopperCu3N-6N10838.92Wire, Sheet, Particle, Target
    High Pure FerroFe3N-4N15357.86Particle, Target
    High Pure GermaniumGe5N-6N9375.35Particle, Target
    High Pure IndiumIn5N-6N1577.3Particle, Target
    High Pure MagnesiumMg4N6511.74Wire, Particle, Target
    High Pure MagnesiumMn3N12447.2Wire, Particle, Target
    High Pure MolybdenumMo4N261710.22Wire, Sheet, Particle, Target
    High Pure NiobiumNb4N24688.55Wire, Target
    High Pure NickelNi3N-5N14538.9Wire, Sheet, Particle, Target
    High Pure LeadPb4N-6N32811.34Particle, Target
    High Pure PalladiumPd3N-4N155512.02Wire, Sheet, Particle, Target
    High Pure PlatinumPt3N-4N177421.5Wire, Sheet, Particle, Target
    High Pure SiliconSi5N-7N14102.42Particle, Target
    High Pure TinSn5N-6N2327.75Wire, Particle, Target
    High Pure TantalumTa4N299616.6Wire, Sheet, Particle, Target
    High Pure TelluriumTe4N-6N4256.25Particle, Target
    High Pure TitaniumTi4N-5N16754.5Wire, Particle, Target
    High Pure TungstenW3N5-4N341019.3Wire, Sheet, Particle, Target
    High Pure ZincZn4N-6N4197.14Wire, Sheet, Particle, Target
    High Pure ZirconiumZr4N14776.4Wire, Sheet, Particle, Target

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