Semi-Insulating , Iron-Doped Indium Phosphide Substrate , 4”, Prime Grade

Semi-Insulating , Iron-Doped Indium Phosphide Substrate , 4”, Prime Grade

PAM-XIAMEN manufactures high purity single crystal Indium Phosphide Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 mm (1 inch) to 200 mm (6 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, technical grade, and optical grade. PAM-XIAMEN also offer materials to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.

Semi-Insulating, Indium Phosphide Substrate, 4”, Prime Grade

What is InP wafer?

Indium phosphide is a semiconducting material similar to GaAs and silicon but is very much a niche product. It’s very effective at developing very high-speed processing and is more expensive than GaAs because of the great lengths to gather and develop the ingredients. Let’s take a look at some more facts about indium phosphide as it pertains to an InP Wafer.

	Electron Hall mobility versus temperature for different doping levels. Bottom curve - no=Nd-Na=8·1017 cm-3; Middle curve - no=2·1015 cm-3; Top curve - no=3·1013 cm-3. (Razeghi et al. [1988]) and (Walukiewicz et al [1980]).
	Electron Hall mobility versus temperature (high temperatures): Bottom curve - no=Nd-Na~3·1017 cm-3; Middle curve - no~1.5·1016 cm-3; Top curve - no~3·1015 cm-3. (Galavanov and Siukaev[1970]).

For weakly doped n-InP at temperatures close to 300 K electron drift mobility:

µn = (4.2÷5.4)·103·(300/T) (cm2V-1 s-1)

	Hall mobility versus electron concentration for different compensation ratios. θ = Na/Nd, 77 K. Dashed curves are theoretical calculations: 1. θ = 0; 2. θ = 0.2; 3. θ = 0.4; 4. θ = 0.6; 5. θ = 0.8; (Walukiewicz et al. [1980]). Solid line is mean observed values (Anderson et al. [1985]).
	Hall mobility versus electron concentration for different compensation ratios θ =Na/Nd, 300 K. Dashed curves are theoretical calculations: 1. θ = 0; 2. θ = 0.2; 3. θ = 0.4; 4. θ = 0.6; 5. θ = 0.8; (Walukiewicz et al. [1980]). Solid line is mean observed values (Anderson et al. [1985]).

Approximate formula for electron Hall mobility

µ=µOH/[1+(Nd/107)1/2],
where µOH=5000 cm2V-1 s-1,
Nd- in cm-3 (Hilsum [1974])

At 300 K, the electron Hall factor rn≈1 in n-InP.
for Nd > 1015 cm-3.

Hole Hall mobility versus temperature for different doping (Zn) levels. Hole concentration at 300 K: 1. 1.75·1018 cm-3; 2. 3.6·1017 cm-3; 3. 4.4·1016 cm-3. θ=Na/Nd~0.1. (Kohanyuk et al. [1988]).

For weakly doped p-InP at temperature close to 300 K the Hall mobility

µpH~150·(300/T)2.2 (cm2V-1 s-1).

Hole Hall mobility versus hole density, 300 K (Wiley [1975]). The approximate formula for hole Hall mobility: µp=µpo/[1 + (Na/2·1017)1/2], where µpo~150 cm2V-1 s-1, Na- in cm-3

At 300 K, the hole factor in pure p-InP: rp~1

Optical Sensing application

Spectroscopic Sensing aiming environmental protection and identification of dangerous substances

• A growing field is sensing based on the wavelength regime of InP. One example for Gas Spectroscopy is drive test equipment with real-time measurement of (CO, CO2, NOX [or NO + NO2]).

• Another example is FT-IR-Spectrometer VERTEX with a terahertz source. The terahertz radiation is generated from the beating signal of 2 InP lasers and an InP antenna that transforms the optical signal to the terahertz regime.

• Stand-Off detection of traces of explosive substances on surfaces, e.g. for safety applications on airports or crime scene investigation after assassination attempts.

• Quick verification of traces of toxic substances in gases and liquids (including tap water) or surface contaminations down to the ppb level.

• Spectroscopy for non-destructive product control of e.g. food (early detection of spoiled foodstuff)

• Spectroscopy for many novel applications, especially in air pollution control are being discussed today and implementations are on the way.

Are You Looking for an InP Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InP wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.