(11-22) Plane Si-GaN Freestanding GaN Substrate By Hydride Vapor
Phase Epitaxy
PAM-XIAMEN has established the manufacturing technology for
freestanding (Gallium Nitride)GaN substrate wafer which is for
UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE)
technology,Our GaN substrate has low defect density and less or
free macro defect density.
PAM-XIAMEN offers full range of GaN and Related III-N Materials
including GaN substrates of various orientations and electrical
conductivity,crystallineGaN&AlN templates, and custom III-N
epiwafers.
(11-22) Plane Si-GaN Freestanding GaN Substrate
| Item | PAM-FS-GaN(11-22)- SI |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | > 106 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. |
| Dislocation Density | From 1 x 10 5to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed
in class 100 clean room |
(11-22) Plane Si-GaN Freestanding GaN Substrate
PAM-XIAMEN's GaN(Gallium Nitride) substrate is singlecrystal
substrate with high quality, which is made with original HVPE
method and wafer processing technology. They are high crystalline,
good uniformity, and superior surface quality. GaN substrates are
used for many kinds of applications, for white LED and LD(violet,
blue and green), Furthermore development has progressed for power
and high frequency electronic device applications.
GaN technology is used in numerous high-power applications such as
industrial, consumer and server power supplies, solar, AC drive and
UPS inverters, and hybrid and electric cars. Furthermore, GaN is
ideally suited for RF applications such as cellular base stations,
radars and cable TV infrastructure in the networking, aerospace and
defense sectors,thanks to its high breakdown strength, low noise
figure and high linearity.
XRD Rocking Curves-GaN Material-TEST REPORT
A test report is necessary to show the compliance between custom
description and our final wafers data. We will test the wafer
characerization by equipment before shipment, testing surface
roughness by atomic force microscope, type by Roman spectra
instrument, resistivity by non-contact resistivity testing
equipment,micropipe density by polarizing microscope, orientation
by X-ray Orientator etc. if the wafers meet the requirement, we
will clean and pack them in 100 class clean room, if the wafers do
not match the custom spec, we will take it off.
The half-height full width (FWHM) is an expression of the range of
functions given by the difference between two extreme values of the
independent variable equal to half of its maximum. In other words,
it is the width of the spectral curve measured between those points
on the Y-axis, which is half the maximum amplitude.
Below is an example of XRD Rocking Curves of GaN Material:
XRD Rocking Curves of GaN Material
