(20-2-1) Plane Si-GaN Freestanding Gallium Nitride(GaN) Wafer
PAM-XIAMEN has established the manufacturing technology for
freestanding (Gallium Nitride)GaN substrate wafer which is for
UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE)
technology,Our GaN substrate has low defect density and less or
free macro defect density.
PAM-XIAMEN offers full range of GaN and Related III-N Materials
including GaN substrates of various orientations and electrical
conductivity,crystallineGaN&AlN templates, and custom III-N
epiwafers.
Here Shows Detail Specification:
(20-2-1) Plane Si-GaN Freestanding GaN Substrate
| Item | PAM-FS-GaN(20-2-1)-SI |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430±25 µm |
| Orientation | (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | >106 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness: | Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. |
| Dislocation Density | From 1 x 10 5to 5 x 106 cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed
in class 100 clean room |
(20-2-1) Plane Si-GaN Freestanding GaN Substrate
The growing demand for high-speed, high-temperature and high
power-handling capabilities has made the semiconductor industry
rethink the choice of materials used as semiconductors. For
instance, as various faster and smaller computing devices arise,
the use of silicon is making it difficult to sustain Moore’s Law.
But also in power electronics, the properties of silicon are no
longer sufficient to allow further improvements in conversion
efficiency.
Due to its unique characteristics (high maximum current, high
breakdown voltage, and high switching frequency), Gallium Nitride
(or GaN) is the unique material of choice to solve energy problems
of the future. GaN based systems have higher power efficiency, thus
reducing power losses, switch at higher frequency, thus reducing
size and weight.
Lattice constant of GaN substrate
Lattice parameters of gallium nitride were measured using
high‐resolution x‐ray diffraction
GaN,Wurtzite sructure. The lattice constants a vs. temperature.
GaN,Wurtzite sructure. The lattice constants c vs. Temperature
Properties of GaN substrate
| PROPERTY / MATERIAL | Cubic (Beta) GaN | Hexagonal (Alpha) GaN |
| Structure | Zinc Blende | Wurzite |
| Space Group | F bar4 3m | C46v ( = P63mc) |
| Stability | Meta-stable | Stable |
| Lattice Parameter(s) at 300K | 0.450 nm | a0 = 0.3189 nm
c0 = 0.5185 nm |
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| Density at 300K | 6.10 g.cm-3 | 6.095 g.cm-3 |
| Elastic Moduli at 300 K | . . . | . . . |
Linear Thermal Expansion Coeff.
at 300 K | . . . | Along a0: 5.59x10-6 K-1
Along c0: 7.75x10-6 K-1 |
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| Calculated Spontaneous Polarisations | Not Applicable | – 0.029 C m-2
Bernardini et al 1997
Bernardini & Fiorentini 1999 |
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| Calculated Piezo-electric Coefficients | Not Applicable | e33 = + 0.73 C m-2
e31 = – 0.49 C m-2
Bernardini et al 1997
Bernardini & Fiorentini 1999 |
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Phonon Energies
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TO: 68.9 meV
LO: 91.8 meV | A1(TO): 66.1 meV
E1(TO): 69.6 meV
E2: 70.7 meV
A1(LO): 91.2 meV
E1(LO): 92.1 meV |
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| Debye Temperature | | 600K (estimated)
Slack, 1973 |
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Thermal Conductivity
near 300K
| . . . | Units: Wcm-1K-1
1.3,
Tansley et al 1997b
2.2±0.2
for thick, free-standing GaN
Vaudo et al, 2000
2.1 (0.5)
for LEO material
where few (many) dislocations
Florescu et al, 2000, 2001
circa 1.7 to 1.0
for n=1x1017 to 4x1018cm-3
in HVPE material
Florescu, Molnar et al, 2000
2.3 ± 0.1
in Fe-doped HVPE material
of ca. 2 x108 ohm-cm,
& dislocation density ca. 105 cm-2
(effects of T & dislocation density also given).
Mion et al, 2006a, 2006b |
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| Melting Point | . . . | . . . |
Dielectric Constant
at Low/Lowish Frequency | . . . | Along a0: 10.4
Along c0: 9.5 |
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| Refractive Index | 2.9 at 3eV
Tansley et al 1997b | 2.67 at 3.38eV
Tansley et al 1997b |
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| Nature of Energy Gap Eg | Direct | Direct |
| Energy Gap Eg at 1237K | | 2.73 eV
Ching-Hua Su et al, 2002 |
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| Energy Gap Eg at 293-1237 K | | 3.556 - 9.9x10-4T2 / (T+600) eV
Ching-Hua Su et al, 2002 |
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| Energy Gap Eg at 300 K | 3.23 eV
Ramirez-Flores et al 1994
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3.25 eV
Logothetidis et al 1994
| 3.44 eV
Monemar 1974
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3.45 eV
Koide et al 1987
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3.457 eV
Ching-Hua Su et al, 2002 |
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| Energy Gap Eg at ca. 0 K | 3.30 eV
Ramirez-Flores et al1994
Ploog et al 1995 | 3.50 eV
Dingle et al 1971
Monemar 1974 |
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| Intrinsic Carrier Conc. at 300 K | . . . | . . . |
| Ionisation Energy of . . . Donor | . . . . | . . . . |
| Electron effective mass me* / m0 | . . . | 0.22
Moore et al, 2002 |
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Electron Mobility at 300 K
for n = 1x1017 cm-3:
for n = 1x1018 cm-3:
for n = 1x1019 cm-3:
| . . . | .
ca. 500 cm2V-1s-1
ca. 240 cm2V-1s-1
ca. 150 cm2V-1s-1
Rode & Gaskill, 1995
Tansley et al 1997a |
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Electron Mobility at 77 K
for n = . . | . . . . | . . . . |
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| Ionisation Energy of Acceptors | . . . | Mg: 160 meV
Amano et al 1990
Mg: 171 meV
Zolper et al 1995
Ca: 169 meV
Zolper et al 1996 |
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Hole Hall Mobility at 300 K
for p= . . . | . . . | . . . . |
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Hole Hall Mobility at 77 K
for p= . . . | . . . . | . . . |
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| . | Cubic (Beta) GaN | Hexagonal (Alpha) GaN |
Application of GaN substrate
Gallium nitride (GaN), with a direct band gap of 3.4 eV, is a
promising material in the development of short-wavelength light
emitting devices. Other optical device applications for GaN include
semiconductor lasers and optical detectors
