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APT50GT60BRDQ2G IGBT Power Module Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 110A Cu...
Product Description Packaging Bulk Part Status Obsolete Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Cu...
2SC2712-GR Electronic Components The transistor Engine Spot FET VN-Channel New Original 2SC2712-GR #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-si...
BC337-40 TO-92 Electronic Components IC MCU Microcontroller Integrated CircuitsI BC337-40 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;c...
BC337-40 TO-92 Electronic Components IC MCU Microcontroller Integrated CircuitsI BC337-40 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;c...
N-CHANNEL J-FET Qualified per MIL-PRF-19500/431 2N4091 2N4092 2N4093 ABSOLUTE MAXIMUM RATINGS (TA = +25 unless otherwise noted) Parameters / Test Conditions Symbol Value Units Gate-Source Voltage VGS -40 V Dra...
Features Low current (max. 100 mA). Low voltage (max. 65 V). Absolute Maximum Ratings Ta = 25C Parameter Symbol BC846 BC847 BC848 Unit Collector-base voltage VCBO 80 50 30 V Collector-emitter voltage VCEO ...
Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) 150o C Junction Temperature Through Hole Package Epoxy meets UL 94 V-0 flammability rating Moi...
PDP SWITCH IRFB4229PbF Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power Dissipation in PDP Sust...
BYV26EGP-E3/73 Glass Passivated Ultrafast Rectifier FEATURES Cavity-free glass-passivated junction Ultrafast reverse recovery time Low forward voltage drop Low switching losses, high efficiency High forward sur...
IRFP4229PbF PDP SWITCH Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power Dissipation in PDP Sust...
MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS (2) ...
Ultrafast Rectifier, 30 A FRED PtTM FEATURES Ultrafast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Lead (Pb)-free (PbF suffix) Designed and qua...
Ultrafast Soft Recovery Diode, 60 A FRED PtTM FEATURES Ultrafast recovery 175 C operating junction temperature Designed and qualified for industrial level BENEFITS Reduced RFI and EMI Higher frequenc...
1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. Absolut...
BC856/857/858/859/860 Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC859, BC860 Complement to BC846 ... BC850 Typical Characteristics Sy...
IRFB4227PBF Quad Power Drivers with Serial Diagnostic Interface Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low EPULSE Rating to R...
N-CHANNEL J-FET Qualified per MIL-PRF-19500/431 2N4091 2N4092 2N4093 ABSOLUTE MAXIMUM RATINGS (TA = +25 unless otherwise noted) Parameters / Test Conditions Symbol Value Units Gate-Source Voltage VGS -40 V Dra...
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