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...Transistor Product Features: - N-Channel Enhancement Mode - Self-Aligned Silicon Gate - High Performance - Low On-Resistance Technical Specifications: - Maximum Power Dissipation: 2.8W - Maximum Drain Source...
... On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V Features Of MSC025SMA120B Stable operation at high junction temperature,...
... SiC MOSFETs can stabilize operation at 175°C high junction temperature. Specification Of MSC080SMA120S Part Number MSC080SMA120S Input Capacitance (Ciss) (Max) @ Vds 838 pF @ 1000 V Power Dissipation (......
...Transistors 650V 40A 136W IKW20N65ET7XKSA1 Integrated Circuit Chip Product Description Of IKW20N65ET7XKSA1 IKW20N65ET7XKSA1 is available with very soft full-rated EC7 (emitter-controlled) diodes, allowing a ...
Integrated Circuit Chip NVHL050N65S3HF N‐Channel MOSFETs Transistors TO-247-3 Product Description Of NVHL050N65S3HF NVHL050N65S3HF is new high voltage super−junction (SJ) MOSFET family that is utilizing charge...
Integrated Circuit Chip NTP055N65S3H N-Channel Transistors TO-220-3 Through Hole Product Description Of NTP055N65S3H NTP055N65S3H is high voltage super-junction (SJ) MOSFET family that is utilizing charge bala...
Integrated Circuit Chip SCTWA90N65G2V N-Channel 650V Transistors TO-247-3 Product Description Of SCTWA90N65G2V SCTWA90N65G2V variation of switching loss is almost independent of junction temperature. Specificat...
1200V 91A Single MOSFETs Transistors SCTW70N120G2V Integrated Circuit Chip Product Description Of SCTW70N120G2V SCTW70N120G2V's variation of switching loss is almost independent of junction temperature. Specifi...
FGH60N60SMD 600V 60A Field Stop IGBT Power Transistor Features Maximum Junction Temperature : TJ =175oC Positive Temperaure Co-efficient for easy parallel operating High current capability Low saturatio...
... Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTI...
IXGA20N250HV IGBT Transistors 2500V 30A 150W Surface Mount TO-263HV Package Product Description Of IXGA20N250HV IXGA20N250HV high Voltage IGBT (Insulated Gate Bipolar Transistor) provides a square Reverse Bias ...
ON Semiconductor IC MMBT3904LT1G TRANS NPN 40V 0.2A SOT23-3 Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N...
BCM846BS NPN/NPN matched double transistor Integrated Circuit IC Chip Basic Information : Technology: Si Brand: Nexperia Product Category:Bipolar Transistors - BJT Mounting Style:SMD/SMT Package / Case:TSSOP-6 ...
BCM846BS NPN/NPN matched double transistor Integrated Circuit IC Chip Basic Information : Technology: Si Brand: Nexperia Product Category:Bipolar Transistors - BJT Mounting Style:SMD/SMT Package / Case:TSSOP-6 ...
Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until ...
Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until ...
... 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PD Collector Power Dissipation 1.25 W TJ Junction Temperature 150 °C Tstg Storage Temperature -55-150 °C ELECTRICAL CHARACTERISTICS (T...
...Transistor MMDT2222A (NPN) / Integrated Circuit IC FEATURES: Complementary PNP Type available MMDT2907A Package: SOT-323 MAXIMUM RATINGS (TA=25 °c unless otherwise noted) Symbol Parameter Value Units VCBO Co...
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configurationis ideal for low ...
50N06P/T 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devi...