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SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage MECHANICAL DATA Case: Molded plastic Epoxy: UL ...
... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-chargers, and solar string inverters.Product Att...
...Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low satur...
...Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturatio...
... easy paralleling capability due to a positive temperature coefficient in VCESAT. Its low EMI and maximum junction temperature of 175C make it suitable for demanding industrial uses.Product Attributes Brand:...
... Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation ...
... coefficient in VCESAT, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C and RoHS compliance, this device is suitable for demanding industrial uses.Product Attributes ...
... Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low satu...
...Bipolar Mosfet Power Transistor TIP142 for amplifier and switching applications TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with...
... Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.......
... Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: TO-247 Mounting Style: Through Hole Collector- Emitter Voltage VCEO Max: 600 V Collector-......
...Transistors TO-3P TIP147 10A 100V PNP DarliCM GROUPon Bipolar Power Transistor TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with ...
...Transistors Bipolar (BJT) Transistor PNP 100V 6A 65W Features ■ Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity Applications ■ General purpo...
...Transistors Description 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS There are two limitations on the power handling ability of a transistor: average junction temperature and second ...
...NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area perf...
...Bipolar Transistors 15A 250V 150W NJW0281G 250V 15A 150W hfe75-150 and NJW0302G 250V 15A 150W hfe75-150 are pair. 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 150 WATTS These complementary d...
...Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Categor...
...Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Categor...
Product Detail Categories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Manufacturer STMicroelectronics Featured Product Power Bipolar Transistors Packaging Tube Part Status Active Transi...
...Transistors - 7th and 8th Generation Infineon's 7th and 8th generation RF transistors are advanced discrete Heterojunction Bipolar Transistors (HBT) designed for high-performance wireless connectivity applic...