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...TRANSISTOR SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS * High Voltage :VCEO = 300V * Small Collector Output Capacitance :Cob=3.0pf PARAMETER SYMBOL RATINGS UNIT Collector-Ba...
...Transistors TIP41/41A/41B/41C TRANSISTOR (NPN) FEATURE Medium Power Linear Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter TIP41 TIP41A TIP41B TIP41C Unit VCBO Collect...
...Transistor Module MG200Q1US51 Product Description Manufactured by: Toshiba America, Inc. Part number: MG200Q1US51 Part Category: Transistors Description: 300A, 1200V, N-CHANNEL IGBT Collector-Emitter Voltage...
...Transistors TIP41/41A/41B/41C TRANSISTOR (NPN) FEATURE Medium Power Linear Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter TIP41 TIP41A TIP41B TIP41C Unit VCBO Collect...
... Collector current 15 A IB Base current 5 A PC PC Collector power dissipation TC≤25℃ 90 W Tj Junction temperature 150 ℃...
Linear Power Mosfet Transistor 2N5458 JFETs Led Televisions IC Chips JFETs General Purpose NChannel Depletion NChannel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and sw...
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#detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:405.95399188092017px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root ...
...NPN Transistor Silkscreen MA Triode Package MBT3904DW1T1G Silkscreen MA triode package SOT-3630.2A 40V NPN transistor Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting S...
...NPN Transistor Silkscreen MA Triode Package MBT3904DW1T1G Silkscreen MA triode package SOT-3630.2A 40V NPN transistor Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting S...
NPN general purpose Transistor BC847AT/BT/CT FEATURES Ideally suited for automatic insertion. For switching and AF amplifier application. APPLICATIONS General purpose switching and amplification. ORDERING INFOR...
Integrated Circuit Chip NTMFS4C55NT1G NTMFS4C55 MOSFET Transistor DFN5 Features Pulse Test: pulse width300 us, duty cycle2%. Switching characteristics are independent of operating junction temperatures. Surfa...
... the optimum performance for automotive applications. Specification Of AFGB30T65SQDN Part Number: AFGB30T65SQDN Maximum Junction Temperature: 175°C Package: TO−263 Type: Automobile Chips Voltage: 1.58 V Coll...
... Field Stop Transistors Product Description Of FGHL75T65LQDTL4 FGHL75T65LQDTL4 is 4th generation mid-speed IGBTs technology co-packed with a fully rated current diode. FGHL75T65LQDTL4 IGBTs operate at 175°C ...
Integrated Circuit Chip NTP095N65S3HF 650V Power NChannel Transistors TO-220-3 Product Description Of NTP095N65S3HF NTP095N65S3HF is high voltage superjunction (SJ) MOSFET family that is utilizing charge bal...
...Transistors TO-247-3 Package Product Description Of MSC750SMA170 MSC750SMA170 device is a 1200V, 17mΩ SiC MOSFET in a TO-247 package with a source sense. Specification Of MSC750SMA170 Part Number: MSC750SMA1...
..., ultra-low weight, and low junction to case thermal resistance. Specification Of MSCSM120AM03CT6LIAG Part Number MSCSM120AM03CT6LIAG Input Capacitance (Ciss) (Max) @ Vds 30200pF @ 1kV Power - ......
...Carbide power module Transistors Product Description Of MSCSM70AM025CD3AG MSCSM70AM025CD3AG e is a phase leg 1200 V/55 A full SiC power module.Features high blocking voltage, very low stray inductance, ultra...
...ultra-low weight, and low junction to case thermal resistance. Specification Of MSCSM170AM23CT1AG Part Number: MSCSM170AM23CT1AG Drain-Source ON Resistance: 15 MΩ Power Dissipation: 862W Output ......
... (RDS(on)) at 10V • 175A Maximum Avalanche Current (IAR) • 175A Maximum Avalanche Energy (EAS) • -55°C to 175°C Operating Junction Temperature (Tj)...