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Bipolar Junction Transistor

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Total 25870 products for bipolar junction transistor Manufacture & Suppliers

Bipolar Discrete Semiconductor Devices TIP122 TIP127 TIP142P NPN PNP Transistor

... Complementary NPN - PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resu...

Guangzhou Topfast Technology Co., Ltd.
Guangdong,China

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NJW0281G 50W Bipolar NPN PNP Transistors TO-3P

... of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages a...

ChongMing Group (HK) Int'l Co., Ltd
China

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PIMN31,115 NPN / PNP Resistor Equipped Transistor 500 MA 50V Dual Gate Transistor

...high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar ...

ChongMing Group (HK) Int'l Co., Ltd
China

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BCP55 Transistors Circuit Board Chips Surface mount Si Epitaxial Planar

...Transistors Surface mount Si-Epitaxial Planar Power dissipation – Verlustleistung 1.3 W Plastic case SOT-223 Kunststoffgehäuse Weight approx. – Gewicht ca. 0.04 g Plastic material has UL classification 94V-0...

Anterwell Technology Ltd.
Guangdong,China

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BCP55 Transistors Circuit Board Chips Surface mount Si Epitaxial Planar

...Transistors Surface mount Si-Epitaxial Planar Power dissipation – Verlustleistung 1.3 W Plastic case SOT-223 Kunststoffgehäuse Weight approx. – Gewicht ca. 0.04 g Plastic material has UL classification 94V-0...

ChongMing Group (HK) Int'l Co., Ltd
China

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General Purpose Surface Mount AFGB40T65SQDN IGBT Transistors Automobile Chips

...Transistors Automobile Chips Product Description Of AFGB40T65SQDN AFGB40T65SQDN is Single IGBT 650 V 80 A 238 W Surface Mount Transistors.Package is TO-263-3. Specification Of AFGB40T65SQDN Part Number: AFGB...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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238W Automobile Chips AFGHL40T65SPD IGBT Trench Field Stop Transistors TO-247-3

...Transistors TO-247-3 Product Description Of AFGHL40T65SPD AFGHL40T65SPD IGBT Trench Field Stop Transistors - 238W Single IGBTs Transistors, package is TO-247-3, Transient Gate−To−Emitter Voltage is ±30V. S...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip FDMT80060DC N Channel Transistors 8-PowerVDFN Transistors

...Transistors 8-PowerVDFN Transistors Product Description Of FDMT80060DC FDMT80060DC N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL packag...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Transistors MSC035SMA070S Integrated Circuit Chip TO-268-3 N-Channel Transistors

Transistors MSC035SMA070S Integrated Circuit Chip TO-268-3 N-Channel Transistors Product Description Of MSC035SMA070S MSC035SMA070S is is a 700 V, 35 mΩ SiC MOSFET in a TO-268 (D3PAK) package. Stable operatio...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Baby Mark King Size Advanced Process Technology Cigarette Maker Transistor

... of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. Voltage Drop The image represents a typical bipolar transistor in...

HK UPPERBOND INDUSTRIAL LIMITED
Hong Kong,China

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PNP Silicon Transistor General Purpose Switching Application BC856

BC856/857/858/859/860 Switching and Amplifier Applications �� Suitable for automatic insertion in thick and thin-film circuits �� Low Noise: BC859, BC860 �� Complement to BC846 ... BC850 Typical Characteristics Sy...

Anterwell Technology Ltd.
Guangdong,China

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PNP Silicon Amplifier Transistor 625mW BC557A

Features �� Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) �� 150o C Junction Temperature �� Through Hole Package �� Epoxy meets UL 94 V-0 flammability rating �� Moi...

Anterwell Technology Ltd.
Guangdong,China

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NPN General Purpose Transistor BC848B

Features �� Low current (max. 100 mA). �� Low voltage (max. 65 V). Absolute Maximum Ratings Ta = 25��C Parameter Symbol BC846 BC847 BC848 Unit Collector-base voltage VCBO 80 50 30 V Collector-emitter voltage VCEO ...

Anterwell Technology Ltd.
Guangdong,China

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SUD25N06-45L Logic Level switching low Power Mosfet Transistor N - Channel 60-V (D-S) 175C

SUD25N06-45L N-Channel 60-V (D-S), 175C MOSFET, Logic Level switching power mosfet low power mosfet Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Pulsed Drain Current ID...

Anterwell Technology Ltd.
Guangdong,China

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IRFP4229PBF Power Mosfet Transistor switching power mosfet PDP SWITCH

IRFP4229PbF PDP SWITCH Features �� Advanced Process Technology �� Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications �� Low EPULSE Rating to Reduce Power Dissipation in PDP Sust...

Anterwell Technology Ltd.
Guangdong,China

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TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS

MOSFETs Silicon N-Channel MOS (DTMOS��) TK10P60W Applications �� Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 �� (typ.) by used to Super Junction Structure : DTMOS (2) ...

Anterwell Technology Ltd.
Guangdong,China

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BYV26EGP-E3/73 Power Mosfet Transistor Glass Passivated Ultrafast Rectifier

BYV26EGP-E3/73 Glass Passivated Ultrafast Rectifier FEATURES Cavity-free glass-passivated junction Ultrafast reverse recovery time Low forward voltage drop Low switching losses, high efficiency High forward sur...

Anterwell Technology Ltd.
Guangdong,China

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LED Inductor 0.35W 2.5A Mosfet Power Transistor AP1332GEU-HF

Cheap Factory Price AP1332GEU-HF Please Contact The Business, Is On Same Day Shall Prevail Description AP1332 series are from Advanced Power innovated design and silicon process technology to achieve the lowest...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application

Suitable for high frequency switching power supply 20A 200V Schottky Barrier Diode HBR20200 TO-220C TO-220HF TO-263 APPLICATIONS �� High frequency switch power supply �� Free wheeling diodes, polarity protection ...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application

Suitable for high frequency switching power supply 20A 200V Schottky Barrier Diode HBR20200 TO-220C TO-220HF TO-263 APPLICATIONS �� High frequency switch power supply �� Free wheeling diodes, polarity protection ...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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