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...Transistors FMMT591 TRANSISTOR (PNP) FEATURE Low equivalent on-resistance Marking :591 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Colle...
... 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Dissipation 1.25 W TJ, Tstg Junction and Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS Ta=25 Š...
...Transistors 3DD13002 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emit...
...Transistors 3DD13003 TRANSISTOR (NPN) FEATURE · power switching applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emi...
...Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V ...
...Transistors FMMT591 TRANSISTOR (PNP) FEATURE Low equivalent on-resistance Marking :591 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Colle...
...Transistors 3904 TRANSISTOR NPN Complementary to MMBT3906 MMBT3904 TRANSISTOR (NPN) FEATURES z Complementary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (T a=25°C unless otherwise noted) Parameter Value Unit Col...
...Transistor Complementary to KTB817 for 60w High Power Amplifier Application CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO ...
...Transistor IXTH200N10T 200A 100V 5.4 Rds 550W Dc-Dc Converters Description Single MOSFET Die,N-Channel Enhancement Mode Avalanche Rated, Low Qg IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low ...
Product Description: High Power IGBT is a type of high power bipolar transistor, specifically a type of insulated-gate bipolar transistor (IGBT). It is an advanced semiconductor device with an excellent combina...
...IGBT Transistors Technology: Si Package / Case: TO-247AB-3 Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter ......
... MOS Transistor. Specification Of IXBX50N360HV Part Number IXBX50N360HV Voltage - Collector Emitter Breakdown (Max) 3600 V Current - Collector (Ic) (Max) 125 A ......
...andamp; Switching andnbsp; Features 1:Transistor Type: PNP Bipolar (BJT) 2:Voltage Rating: 60V Vandlt;subandgt;CEOandlt;/subandgt; 3:Current Rating: 600mA Continuous Iandlt;subandgt;Candlt;/......
Linear Power Mosfet Transistor 2N5458 JFETs Led Televisions IC Chips JFETs General Purpose NChannel Depletion NChannel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and sw...
... Collector current 15 A IB Base current 5 A PC PC Collector power dissipation TC≤25℃ 90 W Tj Junction temperature 150 ℃...
...Transistors D882M TRANSISTOR (NPN) FEATURE Power Dissipation MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V...
...Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitt...
...Transistor S8050 SOT-23 Complimentary to S8550 Silicon Material S8050 TRANSISTOR (NPN) S8050 SOT-23 Datasheet.pdf FEATURES Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y MAXIMUM RATINGS (TA=2...
Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Description SUPERFET III MOSFET is new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for o...
...Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitt...