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Bipolar Junction Transistor

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Total 25870 products for bipolar junction transistor Manufacture & Suppliers

MMDT4413 7 F Array Transistor 40V 0.6A SOT363 Array Bipolar Tube

...Transistor 40V 0.6A SOT363 Array Bipolar Tube MMDT4413-7-F Array transistor BJT TRANS NPN/PNP 40V 0.6A SOT363 Array bipolar tube Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT ...

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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MUN5314DW1T1G Flash Memory IC Chip SOT363 Bipolar Transistors

...Bipolar Transistors MUN5314DW1T1G SOT363 Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP Product Attribute Attribute Value Search Similar Manufacturer: onsemi Product Category: Bipolar Tra...

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors

...600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Packag...

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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MMDT4413 7 F Array Transistor 40V 0.6A SOT363 Array Bipolar Tube

...Transistor 40V 0.6A SOT363 Array Bipolar Tube MMDT4413-7-F Array transistor BJT TRANS NPN/PNP 40V 0.6A SOT363 Array bipolar tube Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT ...

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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2SC1009A RENESAS IC Bipolar Transistors Electronic Components Ic

... Electronics Height: 1.4 mm Length: 1.5 mm Product Type: BJTs - Bipolar Transistors Subcategory: Transistors Technology: Si Width: 2.9 mm See Details Images-Contact us for send Chip is a general term for sem...

ShenZhen QingFengYuan Technology Co.,Ltd.
China

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Bjt Bipolar ROHM UTC ICS 2SB1580 T100 ROHS 2SB1424 120 MHz

...ICS 2SB1580 T100 Bipolar Transistors - BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Sty...

ShenZhen QingFengYuan Technology Co.,Ltd.
China

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MMBT3904 SOT-23 Plastic Encapsulate Transistors Complementary To MMBT3906

...Transistors 3904 TRANSISTOR NPN Complementary to MMBT3906 MMBT3904 TRANSISTOR (NPN) FEATURES z Complementary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (T a=25°C unless otherwise noted) Parameter Value Unit Col...

LU'S TECHNOLOGY CO., Ltd.
China

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FGH60N60SMD IGBT Power Transistor

...Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverte...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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Integrated Circuit Chip MSC180SMA120B 1200V SiC MOSFET Transistors TO-247-4

...Transistors TO-247-4 Product Description Of MSC180SMA120B MSC180SMA120B is Silicon Carbide N-Channel Power MOSFET Transistors, 1200V, 180mΩ SiC MOSFET, package is TO-247-4. Specification Of MSC180SMA120B Pa...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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KUP40H12R4-7M Insulated Gate Bipolar Transistor Module Assembly for Power Management

...Bipolar Transistor Assembly The Ultimate Solution for Power Management Product Description: The Insulated Gate Bipolar Transistor Module, commonly known as IGBT Module, is a crucial component in electronic c...

Krunter Future Tech (Dongguan) Co., Ltd.
China

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Photovoltaic junction box diode 15SQ045 solar bypass diode

Photovoltaic junction box diode 15SQ045 solar bypass diode FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0, halogen-free Metal silicon junction ,majority carrier conductio...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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Photovoltaic junction box diode 15SQ045 solar bypass diode

Photovoltaic junction box diode 15SQ045 solar bypass diode FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0, halogen-free Metal silicon junction ,majority carrier conductio...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel

GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications �� The 3rd Generation �� Enhancement-Mode �� High Speed: tf = 0.30 ��s (max) �� Low Saturation Voltage: VCE...

DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong,China

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GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT20J301 : N Channel ( High Power Switching Motor Control Applications ) Toshiba Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ●Th...

DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong,China

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SST3906T116 Original SMD SMT Bipolar Transistors BJT 40V 200MA

SST3906T116 Original SMD / SMT Bipolar Transistors - BJT 40V 200MA Features ��BVCEO> -40V(Ic=-1mA) ��Complements the SST3904 ��Low capacitance. FAQ Q: Can you accept small order? A: Yes,small order is available .P...

Walton Electronics Co., Ltd.
China

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FMMT497TA Integrated Circuits IC Electronic Components IC Bipolar Transistors

FMMT497TA Integrated Circuits IC Electronic Components IC Bipolar Transistors PRODUCT DESCRIPTION Part number # FMMT497TA is manufactured by Diodes Technologies and distributed by Jalixin. As one of the leading...

Hong Kong Jia Li Xin Technology Limited
China

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3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation

... 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Dissipation 1.25 W TJ, Tstg Junction and Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS Ta=25 Š...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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TO-252Tip Power Transistors 3DD13002 Transistor NPN

...Transistors 3DD13002 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emit...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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3DD13003 NPN Transistor Circuit , NPN Power Transistor Collector Emitter Voltage 400V

...Transistors 3DD13003 TRANSISTOR (NPN) FEATURE · power switching applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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1.25W NPN D882 Tip Power Transistors TO-251-3L Plastic - Encapsulated Transistors

...Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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