Total 29687 products for bipolar junction transistor Manufacture & Suppliers

• NPN Silicon Epitaxial Transistor Slkor BFU590Q for Microwave Low Noise Amplifier Applications

  

  ...silicon epitaxial transistor designed for microwave low-noise amplifier applications. Manufactured using silicon epitaxial process technology, it offers high power gain, wide bandwidth, low noise, low leakag...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• High power gain silicon epitaxial transistor Slkor BFU580Q designed for CATV video amplifiers and remote controls

  

  ... epitaxial transistor designed for high-performance microwave and high-frequency applications. Manufactured using silicon epitaxial technology, it offers high power gain, wide bandwidth, low noise, low leaka...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• NPN Transistor Slkor SS8050 with 25V Collector Emitter Voltage and 1.5A Continuous Collector Current

  

  Product Overview The SS8050 is an NPN transistor designed as a complementary component to the SS8550. It offers a continuous collector current of 1.5A and a collector power dissipation of 0.3W. With a junction ...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• NPN Bipolar Transistor IC Chip 100V 65W 6A TIP41C Single Transistor

  

  ...transistor bipolar NPN 100V 65W 6A Bipolar transistor TIP41C Products Description: 1.TIP41C single transistor bipolar, NPN, 100 V, 65 W, 6 A, 75 hFE 2. TIP41C, NPN transistor, 6 A, Vce=100 V, HFE:15, 3-pin t...

  SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

  Guangdong,China

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• Darlington Bipolar Mosfet Power Transistor TIP147 10A Current 100V Voltage

  

  ...Transistors TO-3P TIP147 10A 100V PNP Darlington Bipolar Power Transistor TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “base...

  Shenzhen ATFU Electronics Technology ltd

  Guangdong,China

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• Silicon bipolar transistor Infineon BFR 181W H6327 low noise figure designed for broadband rf amplifier

  

  ... bipolar RF transistor designed for high-gain broadband amplifiers. It is suitable for collector currents ranging from 0.5 mA to 12 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figur...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• HXY MOSFET RGTH80TS65GC13 IGBT transistor featuring low EMI and maximum junction temperature of 175C

  

  ...Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. Designed for high-performance applications, this device offers easy paralleling capability due to its positive temperature coefficient in V...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• power transistor Infineon AIGB15N65H5 IGBT with low gate charge and 175C maximum junction temperature

  

  ... topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175C, this dynamically stress-tested a...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• MCC MMBT2222AT TP NPN General Purpose Transistor with 150mW Power Dissipation and Epoxy Construction

  

  Product Overview The MMBT2222AT is an NPN General Purpose Amplifier with capabilities for 150mWatts of Power Dissipation. It operates within a junction temperature range of -55C to 150C and can handle a collect...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• MJ2955 Transistor MJ2955 Bipolar Transistor PNP 60V 15A 115W TO-3

  

  Bipolar (BJT) Transistor 2N3055 MJ2955 Silicon Power Transistor Product Detail Packaging Tray Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 15A Voltage - Collector Emitter Breakdown (M...

  Shenzhen Quanyuantong Electronics Co., Ltd.

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• insulated gate bipolar transistor HXY MOSFET AOK40B65M3 with low gate charge and high voltage rating

  

  ... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Chargers, and Solar String Inverters.Product Att...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• insulated gate bipolar transistor HXY MOSFET AOK40B65HQ2 with low EMI and high temperature tolerance

  

  ... Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation ...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• 1200V 75A Insulated Gate Bipolar Transistor HXY MOSFET APT75GP120B2G-HXY for High Power Applications

  

  ... easy paralleling capability due to its positive temperature coefficient in Vce(sat). The maximum junction temperature is 175C.Product Attributes Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD Model: APT75GP120B...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• Insulated Gate Bipolar Transistor HXY MOSFET IXXX160N65B4-HXY 650V 160A TO247P Package RoHS Compliant Device

  

  ... Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low gate charge, and low saturation vo...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• High voltage insulated gate bipolar transistor HXY MOSFET NGTG35N65FL2WG-HXY with easy paralleling and low gate charge

  

  ...Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low satur...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• 650V 50A insulated gate bipolar transistor with low gate charge and easy paralleling HXY MOSFET SPT50N65F1A1T8TL-HXY

  

  ... Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low satu...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• 650V 50A Insulated Gate Bipolar Transistor HXY MOSFET STGWA50M65DF2-HXY with Low Gate Charge and Low EMI

  

  ... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Its maximum junction temperature is 175C.Product Attributes Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD Model: STGWA50M65DF2 Origi...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• High gain broadband amplifier transistor Infineon BFR182E6327 silicon bipolar with low noise figure

  

  Product Overview The BFR182 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It is suitable for collector currents ranging from 1 mA to 20 mA, offering a transition freq...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• High gain broadband amplifier transistor Infineon BFP183WH6327XTSA1 low noise silicon bipolar device

  

  Product Overview The BFP183W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents from 2 mA to 30 mA, offering a transition frequency (fT) ...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• Low saturation voltage PNP bipolar transistor WILLSEMI WPT2E33-3TR for charging circuit applications

  

  Product Overview The WPT2E33 is a single PNP bipolar power transistor from Will Semiconductor Ltd. It features a very low saturation voltage and is suitable for charging circuits and other power management appl...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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