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...ough-hole transistors are designed for general-purpose applications, offering reliable and versatile performance. The BC337-40 features a single NPN configuration and comes in a TO-......
...Transistor 230V 15A 150W Mosfet Bipolar Transistor Power Amplifier Applications • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifi...
...Transistors Bipolar (BJT) Transistor PNP 100V 6A 65W Features ■ Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity Applications ■ General purpo...
MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T...
...Transistors The BC856, BC857, and BC858 series are PNP general-purpose bipolar transistors designed for a wide range of applications. These transistors offer reliable performance for various electronic circu...
...surface-mount SOT-23 package. Product Attributes Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD Model: MMBT5551 Type: NPN Bipolar Transistor Complementary to: MMBT5401 Package: SOT-23 Case Material: Molded Plas...
...Bipolar Transistors BJT Power BJT Trans GP BJT PNP 80V 10A 5000mW 3-Pin(2+Tab) TO-3 Tray Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-3 Product Type: BJ...
...) technology. The resulting transistor shows good gain linearity behaviour. Features - High breakdown voltage VCEO = 140 V - Typical ft = 20 MHz - Fully characterized at 125 oC Product Category: Bipolar Tran...
Product Overview The BFS481 is a low-noise silicon bipolar RF transistor designed for low-noise, high-gain broadband amplifiers. It features two internally isolated transistors in a single package, offering fT ...
...Transistors MMBTA55 TRANSISTOR (NPN) FEATURE l Driver Transistors Marking :2H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emit...
...Transistors MMBTA55 TRANSISTOR (NPN) FEATURE l Driver Transistors Marking :2H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emit...
...bipolar transistor designed for surface mount applications. It offers excellent hFE linearity, low noise, and is complementary to the A733 transistor. This device is suitable for various electronic circuits ...
...Bipolar Transistor The MMBTA92 is a PNP bipolar transistor designed for surface mount applications. It offers a high breakdown voltage and low collector-emitter saturation voltage, making it a complementary ...
...bipolar transistor designed for surface mount applications. It offers complementary characteristics to the PXT8050 and comes in a SOT-89 package. This device is suitable for various electronic applications r...
...NPN High Power Bipolar Transistor Product Overview The Nexperia MJD44H11A is a high-power NPN bipolar transistor designed for demanding applications. Encased in a compact DPAK (TO-252 / SOT428C) surface-moun...
... to the 2SC5200N. This transistor is recommended for the output stage of 100-W high-fidelity audio frequency amplifiers.Product Attributes Brand: TOSHIBA Product Type: Bipolar Transistors Material: Silicon T...
...smaller system sizes and simplified assembly. These transistors are complementary to the RN2307 to RN2309 series and are AEC-Q101 qualified.Product Attributes Brand: Toshiba Type: Silicon NPN Epitaxial Bipol...
RN2301 to RN2306 Bipolar Transistors The RN2301 to RN2306 series are silicon PNP epitaxial bipolar transistors featuring a built-in bias resistor (PCT Process). These transistors are designed for various applic...
JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transis...
...Transistors FMMT491 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitt...