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Bipolar Junction Transistor

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Total 25870 products for bipolar junction transistor Manufacture & Suppliers

LED Inductor 0.35W 2.5A Mosfet Power Transistor AP1332GEU-HF

Cheap Factory Price AP1332GEU-HF Please Contact The Business, Is On Same Day Shall Prevail Description AP1332 series are from Advanced Power innovated design and silicon process technology to achieve the lowest...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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1N4148W-7-F Diodes Surface Mount IC Diode Transistor 300mA (DC) Standard

1N4148W-7-F Diodes 300mA (DC) Standard Surface Mount -65��C ~ 150��C SOD-123 rated over a ��40��C to +105��C temperature Product description The 1N4148W-7-F diode is a single rectifier diode with a Digi-ReelR Altern...

AYE TECHNOLOGY CO., LIMITED
Guangdong,China

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MBR20100CT MBR20100 MBR20100CTP Transistor Diode Array 1 Pair Common Cathode Schottky 100V 10A Through Hole Original and New

Product Description Product Detail Series MBR Packaging Tube Part Status Active Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io...

Shenzhen Quanyuantong Electronics Co., Ltd.

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MMBF5484 Audio Signal Amplifier Transistor Low Noise N Channel

...: RF JFET Transistors RoHS: Details Transistor Type: JFET Technology: Si Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: - 25 V Id - Continuous Drain Current: 5 mA Maximum Drain ......

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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MMBF5484 Audio Signal Amplifier Transistor Low Noise N Channel

...: RF JFET Transistors RoHS: Details Transistor Type: JFET Technology: Si Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: - 25 V Id - Continuous Drain Current: 5 mA Maximum Drain ......

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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Submucous Myoma Gyn Instruments , Bipolar Gynecology Surgical Instruments Probe

...: uterine submucous myoma submucous myoma of uterus hysteroscope submucous myoma electrosection Gyn Probe Procedures for Oophorectomy Clamp the junction of the fallopian tube and uterine cornu, and...

Chengdu Mechan Electronic Technology Co., Ltd
Sichuan,China

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2N2219 ORiginal Through Hole Bipolar Transistors BJT 250MHz

2N4416 Original Through Hole JFET N - Channel - 30 V Low Ciss DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal...

Walton Electronics Co., Ltd.
China

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IXGA20N250HV IGBT Transistor Module 2500V 30A 150W Surface Mount TO-263HV

... TO-263HV IXYS IXGA20N250HV High Voltage IGBT IXYS IXGA20N250HV High Voltage IGBT (Insulated Gate Bipolar Transistor) provides a square Reverse Bias Safe Operating Area (RBSOA) and 10µs short circuit withsta...

HongKong Wei Ya Hua Electronic Technology Co.,Limited
China

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IKWH50N65WR6XKSA1 Insulated Gate Bipolar Transistor 650V For Home Appliances

IKWH50N65WR6XKSA1 IGBT Transistors HOME APPLIANCES 14 Infineon Technologies TRENCHSTOP�� 5 Reverse Conducting IGBTs Infineon Technologies TRENCHSTOP�� 5 Reverse Conducting IGBTs are optimized for full-rated hard ...

HongKong Wei Ya Hua Electronic Technology Co.,Limited
China

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IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264

... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low ...

HongKong Wei Ya Hua Electronic Technology Co.,Limited
China

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IRFD120 Power Mosfet Transistor electrical ic N-Channel Power MOSFET

...operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and dri...

ChongMing Group (HK) Int'l Co., Ltd
China

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MPSA14 A14 NPN Darlington Bipolar Transistor 500mA 625mW TO-92

Product Description Product Detail Packaging Bulk Part Status Obsolete Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) ...

Shenzhen Quanyuantong Electronics Co., Ltd.

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180MHz BCX56 NPN Bipolar Transistor 80V 1A 1.25W SOT-89 IC Chip

Product Description Product Detail Packaging Tape & Reel (TR) Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, ...

Shenzhen Quanyuantong Electronics Co., Ltd.

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Integrated Circuits IC DTC114EETL Pre-Biased Bipolar Transistor (BJT) NPN-Pre-Biased 50V 50 mA 250 MHz 150mW Surface Mount EMT3

Integrated Circuits IC DTC114EETL Pre-Biased Bipolar Transistor (BJT) NPN-Pre-Biased 50V 50 mA 250 MHz 150mW Surface Mount EMT3 [Who we are?] Shenzhen QINGFENGYUAN Technology Co., Ltd established in 2013, is a ...

ShenZhen QingFengYuan Technology Co.,Ltd.
China

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Integrated Circuits IC DTC143EMT2L Pre-Biased Bipolar Transistor (BJT) NPN-Pre-Biased 50V 100 mA 250 MHz 150mW Surface Mount VMT3

Integrated Circuits IC DTC143EMT2L Pre-Biased Bipolar Transistor (BJT) NPN-Pre-Biased 50V 100 mA 250 MHz 150mW Surface Mount VMT3 [Who we are?] Shenzhen QINGFENGYUAN Technology Co., Ltd established in 2013, is ...

ShenZhen QingFengYuan Technology Co.,Ltd.
China

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DarliCM GROUPon Bipolar Mosfet Power Transistor TIP142 Amplifier Switching Applications

... in planar technology with “base island” layout and monolithic DarliCM GROUPon configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Featur...

ChongMing Group (HK) Int'l Co., Ltd
China

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BCX56 Bipolar Transistor Customiazaion

BCX56 Bipolar Transistor List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND XCB56362PV100 MOTOROLA LM5068MMX-2 TI LFL185G42TD1A241 ......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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MMDT5551 Bipolar Transistors BJT 200mA 160V

MMDT5551 Bipolar Transistors BJT 200mA 160V List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND CKCA43C0G1H220KT010N TDK ......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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DCX114YU-7-F Pre-Biased Bipolar Transistor BJT 50V 100mA 250MHz 200mW

DCX114YU-7-F Pre-Biased Bipolar Transistor BJT 50V 100mA 250MHz 200mW Features  Epitaxial Planar Die Construction  Built-In Biasing Resistors  Surface Mount ......

Shenzhen Xinyuanpeng Technology Co., Ltd.
China

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LTV-356T-D Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver

LTV-356T-D Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • Maximum output ......

Shenzhen Sai Collie Technology Co., Ltd.
China

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