| Sign In | Join Free | My burrillandco.com |
|
Digital Transistors (BRT) This series of digital transistors, also known as Bias Resistor Transistors (BRT), integrates a single transistor with a monolithic bias network consisting of a series base resistor an...
...Transistors (BRT) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mono...
...Transistors (BRT) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) integrates a single transistor with a mo...
... Max: 100 V Emitter- Base Voltage VEBO: 5 V Collector- Base Voltage VCBO: 100 V Maximum DC Collector Current: 8 A Maximum Collector Cut-off ......
... Temperature is TJ = 175°C. Specification Of AFGHL40T65SQD Part Number: AFGHL40T65SQD Transient Gate−To−Emitter Voltage: ±30V Voltage - Collector Emitter Breakdown (Max): 650 V Power Dissipation @ TC = 25°C(...
Aviation Parts 2N2907A Bipolar Transistors Collector- Emitter Voltage 60 V Descriptions of Aviation Parts: The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and i...
...Transistors TO-220-3 10kHz Single IGBTs Product Description Of IXYP60N65A5 IXYP60N65A5 is XPT™ 650V, 134A, 395W GenX5™ Single IGBT Transistors, Extreme Light Punch Through IGBT for up to 10kHz Switching. Sp...
BD244B, BD244C* (PNP) Complementary Silicon Plastic Power Transistors Features •Collector - Emitter Saturation Voltage - VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc •Collector Emitter Sustaining Voltage - VCEO(sus)...
...PERFORMANCE TRANSISTOR FZT653 FEATURES * Low saturation voltage COMPLEMENTARY TYPE— FZT753 PARTMARKING DETAIL— FZT653 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 120 V C...
...Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP120 : TIP121 : TIP122 60 80 100 V V V VCEO Collector-Emitter Voltage : TIP120 ...
... RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -35 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -5 V Collector Current -...
... with soft and fast recovery Emitter Controlled 7 diode. Specification Of IKW25N120CS7 Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Mounting Style: Through Hole Configuration: S...
..., and excellent ruggedness and reliability. The SI4010-C2-GTR is ideal for use in power amplifiers, switching circuits, and linear amplifiers. Features: - High Gain: up to 24 dB - High Efficiency: up to 40% ...
HMC536LP2E RF Power Transistor High Performance Low Noise High Gain HMC536LP2E Power Transistor Product Description: The HMC536LP2E is a GaAs pHEMT MMIC power amplifier which operates between DC and 6 GHz. This...
2SC5242 3 Pin Transistor NPN Epitaxial Silicon Transistor Original NPN Epitaxial Silicon Transistor 2SC5242 Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High ...
...Transistor Module , PLC Negative Control DC Amplifier Board 1 , the load voltage, current type is different Load type: Transistors can only carry DC loads, while relays can have both AC and DC loads. Current...
...Transistor Module , PLC Negative Control DC Amplifier Board 1 , the load voltage, current type is different Load type: Transistors can only carry DC loads, while relays can have both AC and DC loads. Current...
...transistor designed for switching and amplifier applications. It features a low collector saturation voltage and serves as a complementary type to the PNP transistor 2SB1124. This transistor is suitable for ...
... infrared emitting diode in a six lead plastic DIP. TLP734 is no−base internal connection for high−EMI environments. Collector−emitter voltage: 55 V (min.) Current transfer ratio: 50% (min.) Rank GB: 100%...
...transistor General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complemen...