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... MIPS Througput at 20 MHz • High Endurance Non-volatile Memory segments – 1K Bytes of In-System Self-programmable Flash program memory – 64 Bytes EEPROM – 64 Bytes Internal SRAM – Write/Erase Cycles: 10,000...
...In-System Programmable (ISP) Flash Memory – Endurance: 10,000 Write/Erase Cycles • 4.0V to 5.5V Operating Range • Fully Static Operation: 0 Hz to 33 MHz • Three-level Program Memory Lock • 256 x 8-bit Intern...
...-pin VQFP (84 user I/O) Attributes of XCR3128XL-10TQG144I Product Status Active Programmable Type In System Programmable (min 1K program/erase...
...) - Pb-free available for all packages Attributes of XC95144XL-5TQG100C Product Status Active Programmable Type In System Programmable (min 10K program/erase cycles...
...) - Pb-free available for all packages Attributes of XC95144XL-10TQG144C Product Status Active Programmable Type In System Programmable (min 10K program/erase...
...) - Pb-free available for all packages Attributes of XC95144XL-7TQG144C Product Status Active Programmable Type In System Programmable (min 10K program/erase cycles...
... • 6576 KB (6288 KB code flash + 288 KB data flash) on-chip flash memory: – supports read during program and erase operations, and multiple blocks allowing EEPROM emulation...
...) • 4224 KB (4096 KB code flash + 128 KB data flash) on-chip flash memory: supports read during program and erase operations, and multiple blocks allowing EEPROM emulation • 176 KB HSM dedicated flash memory...
Product Name: XCF32PFSG48C Low-Power Advanced CMOS NOR Flash Process Features: In-System Programmable PROMs for Configuration of Xilinx FPGAs Endurance of 20,000 Program/Erase Cycles JTAG Command Initiation of...
.../output as well as for command inputs. The Erase and Program operations are automatically executed, making the device most suitable for applications such as solid-state file storage, voice recording, image f...
... current – 200 nA standby mode current – 9 mA read current – 20 mA program/erase current Cycling endurance: 1,000,000 cycles per sector typical Data retention: 20 years typical Software Features ......
... and Software Protection • Block Write Protection− Protect 1/4, 1/2 or Entire EEPROM Array • Low Power CMOS Technology • 1,000,000 Program/Erase Cycles • 100 Year Data Retention •...
... Static Operation: 0 Hz to 24 MHz • Two-level Program Memory Lock • 128 x 8-bit Internal RAM • 15 Programmable I/O Lines • Two 16-bit Timer/Counters • Six Interrupt ......
... Static Operation: 0 Hz to 24 MHz • Two-level Program Memory Lock • 128 x 8-bit Internal RAM • 15 Programmable I/O Lines • Two 16-bit Timer/Counters • Six Interrupt ......
...: 0 Hz to 24 MHz • Three-level Program Memory Lock • 128 x 8-bit Internal RAM • 32 Programmable I/O Lines • Two 16-bit Timer/Counters • Six Interrupt ......
... Range 2.Fully Static Operation: 0 Hz to 33 MHz 3.Three-level Program Memory Lock 4.256 x 8-bit Internal RAM 5.32 Programmable I/O Lines 6.Three 16-bit Timer/Counters 7.Eight Interrupt Sources 8.......
...Control Input ■ BYTE and PAGE WRITE (up to 16 Bytes) ■ RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing ■ Enhanced ESD/Latch-Up Protection ■ More than 1 Millio...
...Hz to 24 MHz • Three-Level Program Memory Lock • 256 x 8-Bit Internal RAM • 32 Programmable I/O Lines • Three 16-Bit Timer/Counters • Eight Interrupt Sources • ......
...Fully Static Operation – Up to 16 MIPS Throughput at 16 MHz – On-Chip 2-cycle Multiplier • Non-volatile Program and Data Memories – 64K/128K/256K Bytes of In-System Self-Programmable Flash Endurance: 10,000 ...
... • Fully Static Operation: 0 Hz to 33 MHz • Three-level Program Memory Lock • 256 x 8-bit Internal RAM • 32 Programmable I/O Lines • Three 16-bit Timer/Counters • Eight Interrupt Sources • ......