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... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...
Mosfet Power Transistor IGT60R070D1ATMA1 Mosfet 600V CoolGaN Power Transistor Feature Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of reverse...
Mosfet Power Transistor IGT60R070D1ATMA1 Mosfet 600V CoolGaN Power Transistor Feature Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of reverse...
... HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized devic...
Mosfet Power Transistor IGOT60R070D1AUMA1 MOSFET 600V CoolGaN Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of rever...
... switching This device is specially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transi...
Mosfet Power Transistor IGOT60R070D1AUMA1 MOSFET 600V CoolGaN Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of rever...
... switching This device is specially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transi...
... for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A • ...
...Transistors IKW20N60T 600V 20A 166W Low Loss IGBT Power Transistor Description Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE dio...
BAW56/BAV70/BAV9 SWITCHING DIODE SOD-123 Plastic-Encapsulate Diodes FEATURE Fast Switching Speed For General Purpose Switching Applications SWITCHING DIODESOD Marking MAXIMUM RATINGS (Ta=25℃ unless otherwise no...
BAW56/BAV70/BAV9 SWITCHING DIODE SOD-123 Plastic-Encapsulate Diodes FEATURE Fast Switching Speed For General Purpose Switching Applications SWITCHING DIODESOD Marking MAXIMUM RATINGS (Ta=25℃ unless otherwise no...
...Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with th...
... performance Trench technology for extremely low RDS (ON) and fast switching 5. High power and current handling capability 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) .....
...fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and...
...fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and...
...Transistor Multipurpose For OBC Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged Trench and field-stop technology • Low collector to emitter saturation voltag...
...Switch Advanced Process Technology INFINEON Germany Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Pow...
...Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista...