| Sign In | Join Free | My burrillandco.com |
|
...470 MHz • Specified 12.5 Volt, UHF Characteristics — Output Power = 20 Watts Minimum Gain = 21 dB Harmonics = –40 dB (Max) • 50 Ω Input/Output Impedance Applications: • Guaranteed Stability and Ruggedness • ...
Quick Detail: MHW807-1 - Motorola, Inc - UHF POWER AMPLIFIERS Description: Designed specifically for mobile cellular radio applications. The MHW807 Series amplifiers are capable of wide power range control, ope...
... and an all gold metallization system. Applications: • Specified for 53– and 60–Channel Performance • Broadband Power Gain @ f = 40 – 450 MHz Gp= 18.2 dB (Typ) @ 50 MHz 19.0 dB (Typ) @ 450 MHz • Broadband ...
Quick Detail: MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors Description: Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high...
Quick Detail: MRF557 - Motorola, Inc - RF LOW POWER TRANSISTOR NPN SILICON Description: Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. Applications: • Specified @ ...
Quick Detail: MRF1035MB - Motorola, Inc - MICROWAVE POWER TRANSISTORS Description: Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ...
Quick Detail: MRF5177 - Motorola, Inc - 30W, 400MHZ RF POWER TRANSISTOR NPN SILICON Description: …designed for VHK/UHF power amplifier applications.This device is optimized for rugged performance in 225-400MHz ...
Quick Detail: MRF9060S - Motorola, Inc - 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Description: Designed for broadband commercial and industrial applications with frequen- cies up to 1.0 ...
... gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 26 volt base station ......
Quick Detail: MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS Description: Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadb...
Quick Detail: UHF power LDMOS transistor Description: Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting ...
... INPUT IMPENDANCE Applications: The Electrodes are is Isolated from Case 6 Darlington Transistor Built Into in 1 Package High Input Impendance High DCCurrent Gain: hFE = 100(Min.)(IC=15A) Low Saturation Volt...
... VOLTS − 250 WATTS Applications: • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A • Very Fast Switching Times: ......
Quick Detail: MITSUBISHI TRANSISTOR MODULES Description: HIGH POWER SWITCHING USE INSULATED TYPE Applications: • IC Collector current ........................ 150A • VCEX Collector-emitter voltage ......... 100...
...an I2C compatible interface which allows control of all the parameters necessary to directly setup and adjust the gain and contrast in the CRT display. Brightness and bias can be controlled through the DAC o...
Quick Detail: High Speed Buffer Description: These high speed unity gain buffers slew at 800 V/µs and have a small signal bandwidth of 50 MHz while driving a 50Ω load. They can drive ±300 mA peak and do not ......
Quick Detail: Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers Description: Quality bipolar fabrication with innovative design concepts are employed for the MC33181/2/4, MC34181/2/4 ...