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Total 933 products for gain muscle quickly Manufacture & Suppliers

Integrated Circuit Chip HTRC11001T - Semiconductors - HITAG reader chip

...). The receiver parameters (gain factors and filter cut-off frequencies) can be optimized to system and transponder requirements. The HTRC11001T is designed for easy integration into RF identification reader...

Mega Source Elec.Limited
China

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Integrated Circuit Chip SST5462-E3 - Vishay Siliconix - P-Channel JFETs

Quick Detail: P-Channel JFETs Description: The 2N/SST5460 series are p-channel JFETs designed to provide all-around performance in a wide range of amplifier and analog switch applications. The 2N series, TO-226...

Mega Source Elec.Limited
China

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RF Power Transistors BLF248 VHF push-pull power MOS transistor

... balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. Applications: • High power gain • Easy power control •...

Mega Source Elec.Limited
China

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RF Power Transistors MHW105 - Motorola, Inc - Hybrid Power Module

Quick Detail: MHW105 - Motorola, Inc - Hybrid Power Module Description: The MHW105 is designed specifically for portable radio applications. The MHW105 is capable of 5.0 watts power output, operates from a 7.5 ...

Mega Source Elec.Limited
China

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RF Power Transistors MHW720A1 - Motorola, Inc - UHF Power Amplifiers

...470 MHz • Specified 12.5 Volt, UHF Characteristics — Output Power = 20 Watts Minimum Gain = 21 dB Harmonics = –40 dB (Max) • 50 Ω Input/Output Impedance Applications: • Guaranteed Stability and Ruggedness • ...

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China

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RF Power Transistors MHW807-1 - Motorola, Inc - UHF POWER AMPLIFIERS

Quick Detail: MHW807-1 - Motorola, Inc - UHF POWER AMPLIFIERS Description: Designed specifically for mobile cellular radio applications. The MHW807 Series amplifiers are capable of wide power range control, ope...

Mega Source Elec.Limited
China

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RF Power Transistors MHW5182 - Motorola, Inc - 450 MHz CATV Amplifier

... and an all gold metallization system. Applications: • Specified for 53– and 60–Channel Performance • Broadband Power Gain  @ f = 40 – 450 MHz Gp= 18.2 dB (Typ) @ 50 MHz 19.0 dB (Typ) @ 450 MHz • Broadband ...

Mega Source Elec.Limited
China

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MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors

Quick Detail: MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors Description: Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high...

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China

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RF Power Transistors MRF557 - Motorola, Inc - RF LOW POWER TRANSISTOR NPN SILICON

Quick Detail: MRF557 - Motorola, Inc - RF LOW POWER TRANSISTOR NPN SILICON Description: Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. Applications: • Specified @ ...

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China

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RF Power Transistors MRF1035MB - Motorola, Inc - MICROWAVE POWER TRANSISTORS

Quick Detail: MRF1035MB - Motorola, Inc - MICROWAVE POWER TRANSISTORS Description: Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ...

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China

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RF Power Transistors MRF5177 - Motorola, Inc - 30W, 400MHZ RF POWER TRANSISTOR NPN SILICON

Quick Detail: MRF5177 - Motorola, Inc - 30W, 400MHZ RF POWER TRANSISTOR NPN SILICON Description: …designed for VHK/UHF power amplifier applications.This device is optimized for rugged performance in 225-400MHz ...

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MRF9060S - Motorola, Inc - 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Quick Detail: MRF9060S - Motorola, Inc - 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Description: Designed for broadband commercial and industrial applications with frequen- cies up to 1.0 ...

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China

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RF Power Transistors MRF9120 - Motorola, Inc - RF Power Field Effect Transistors

... gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 26 volt base station ......

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China

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RF Power Transistors MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS

Quick Detail: MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS Description: Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadb...

Mega Source Elec.Limited
China

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RF Power Transistors BLF861 - - UHF power LDMOS transistor

Quick Detail: UHF power LDMOS transistor Description: Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting ...

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China

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IGBT Power Module MP6501A Toshiba NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING

... INPUT IMPENDANCE Applications: The Electrodes are is Isolated from Case 6 Darlington Transistor Built Into in 1 Package High Input Impendance High DCCurrent Gain: hFE = 100(Min.)(IC=15A) Low Saturation Volt...

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China

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BUV21G - ON Semiconductor - SWITCHMODE Series NPN Silicon Power Transistor

... VOLTS − 250 WATTS Applications: • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A • Very Fast Switching Times: ......

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China

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IGBT Power Module QM150DY-2HB - MITSUBISHI - MITSUBISHI TRANSISTOR MODULES

Quick Detail: MITSUBISHI TRANSISTOR MODULES Description: HIGH POWER SWITCHING USE INSULATED TYPE Applications: • IC Collector current ........................ 150A • VCEX Collector-emitter voltage ......... 100...

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China

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LM2465TA - National Semiconductor - 150 MHz I2C Compatible RGB Preamplifier with Internal 254 Character OSD ROM, 512 Ch

...an I2C compatible interface which allows control of all the parameters necessary to directly setup and adjust the gain and contrast in the CRT display. Brightness and bias can be controlled through the DAC o...

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China

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Power Led Driver IC LM6321M - National Semiconductor - High Speed Buffer

Quick Detail: High Speed Buffer Description: These high speed unity gain buffers slew at 800 V/µs and have a small signal bandwidth of 50 MHz while driving a 50Ω load. They can drive ±300 mA peak and do not ......

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China

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