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Total 10000 products for high power switch Manufacture & Suppliers

IGBT Power Module MG20G6EL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z The electrodes are isolated from case. z High input impedance z Includes a complete half bridge in one p...

Mega Source Elec.Limited
China

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IGBT Power Module MG20G6EL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z The electrodes are isolated from case. z High input impedance z Includes a complete half bridge in one p...

Mega Source Elec.Limited
China

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IGBT Power Module MG25J2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG30D6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG30D6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG30G1BL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (max) (IC = 300A) trr = 0.15µs (max) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.....

Mega Source Elec.Limited
China

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IGBT Power Module MG30G1BL3- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG30G2CL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.......

Mega Source Elec.Limited
China

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IGBT Power Module MG30G2CL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG30G2CL3 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG30G2YM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG30G6EL1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG30G6EL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG30H1BL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2...

Mega Source Elec.Limited
China

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IGBT Power Module MG30J6ES11- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG30V1BS41- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG30V2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 1.5µs (Max.) (IC = 30A) trr = 0.3µs (Max.) (IF = 30A) Specifications: part no. MG30V2YS40 Manufact...

Mega Source Elec.Limited
China

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IGBT Power Module MG40S2YK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = ...

Mega Source Elec.Limited
China

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IGBT Power Module MG50D2DM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z High input impedance z High speed : tf = 0.5��s (Max) trr = 0.5��s...

Mega Source Elec.Limited
China

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IGBT Power Module MG50G1BL3 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z High input impedance z High speed : tf = 0.5��s (Max) trr = 0.5��s...

Mega Source Elec.Limited
China

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