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Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z High input impedance z High speed : tf = 0.5µs (Max) trr = 0.5µs...
Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z High input impedance z High speed : tf = 0.5µs (Max) trr = 0.5µs...
Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z High input impedance z High speed : tf = 0.5µs (Max) trr = 0.5µs...
Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z High input impedance z High speed : tf = 0.5µs (Max) trr = 0.5µs...
Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z High input impedance z High speed : tf = 0.5µs (Max) trr = 0.5µs...
Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z High input impedance z High speed : tf = 0.5µs (Max) trr = 0.5µs...
Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z High input impedance z High speed : tf = 0.5µs (Max) trr = 0.5µs...
Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z High input impedance z High speed : tf = 0.5µs (Max) trr = 0.5µs...
Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf = 0.35µs (max) trr = 0....
... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2....
... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2....
... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2....
... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2....
... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2....
... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2....
... N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]The electrodes are isolated from case. [1]High input impedance. [1]6 IGBTs built into 1 package. [1]...
... N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]The electrodes are isolated from case. [1]High input impedance. [1]6 IGBTs built into 1 package. [1]...
... N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]The electrodes are isolated from case. [1]High input impedance. [1]6 IGBTs built into 1 package. [1]...
... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = ...
Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z High input impedance z High speed : tf = 0.5µs (Max) trr = 0.5µs...