Sign In | Join Free | My burrillandco.com

For Buyers
For Suppliers
- Search Suppliers
- Privacy Policy
Inquiry Basket(0)

All Categories

Home > Lights & Lighting > Lighting Accessories > LED Encapsulation Series >

High Power Switch

Fair Trading Service

Report fraud supplier Report IPR Products

Haven't found right suppliers
Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
And this service is free of charge.
we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!

Submit Buying Request

Total 10000 products for high power switch Manufacture & Suppliers

IGBT Power Module MG150H2DL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG150H2YL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG150H2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG150J1BS11 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG150J1JS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG150J1JS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG150J1ZS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG150J1ZS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG150J2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG150J7KS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1] 7 IGBTs built into 1 package. [1] Enhancement-mode [1] High speed type IGBT : Inverter stage : VCE (sat) = 2.8V (max) (@IC = 150A) : tf = 0.5µs (max) (@IC = 150A) : ......

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG150Q1JS43 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Chopper Applications Applications: z High input impedance z High speed : tf = 0.5��s (Max) trr = 0.5��s (Max)...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG150Q1JS65H - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Chopper Applications Applications: z High input impedance z High speed : tf = 0.5��s (Max) trr = 0.5��s (Max)...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG150Q1JS65HA - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Chopper Applications Applications: z High input impedance z High speed : tf = 0.5��s (Max) trr = 0.5��s (Max)...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG150Q2YS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

Quick Detail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf = 0.3µs (Max) @Inductiv...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG200H1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG200H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG200H1FL1A - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z The electrodes are isolated from case. z High input impedance z Includes a complete half bridge in one p...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG200H1JK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG200H2CK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG200H2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

Verified Supplier

Add to cart

|< << 40 41 42 43 44 45 46 47 48 >> >|

Inquiry Cart 0

Friendly Links: www.everychina.com

Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们

Copyright © 2009 - 2026 burrillandco.com. All rights reserved.