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High Voltage Power Module

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Total 100077 products for high voltage power module Manufacture & Suppliers

IGBT Power Module MG75Q2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...ail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1] High input impedance [1] High speed : tf= 0.3 µs (Max) @Iinductive l...

Mega Source Elec.Limited
China

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IGBT Power Module MG100G2DL1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...ail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf = 0.5µs (Max) trr = 0.5µs (Ma...

Mega Source Elec.Limited
China

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IGBT Power Module MG100J2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A) [1]Low saturation voltage : VCE (sat)=2....

Mega Source Elec.Limited
China

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IGBT Power Module MG100Q2YS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...ail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf = 0.3µs (Max) @Inductive load...

Mega Source Elec.Limited
China

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IGBT Power Module MG150G2YL1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG150H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG150H2CK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG150H2DL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG150H2YL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG150H2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG150J1BS11 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG150J1JS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG150J1JS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG150J1ZS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG150J1ZS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG150J2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG150Q2YS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...ail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf = 0.3µs (Max) @Inductive Load...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG200H1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG200H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG200H1FL1A - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z The electrodes are isolated from case. z High input impedance z Includes a complete hal...

Mega Source Elec.Limited
China

Verified Supplier

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