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Total 100000 products for high voltage power module Manufacture & Suppliers

IGBT Power Module MG30G6EL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG30H1BL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2...

Mega Source Elec.Limited
China

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IGBT Power Module MG30J6ES11- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG30V1BS41- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG40S2YK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = ...

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS9 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS40- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS45 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J2YS91 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage : VCE (sat)=2....

Mega Source Elec.Limited
China

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IGBT Power Module MG50J6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]The electrodes are isolated from case. [1]High input impedance. [1]6 IGBTs built into ...

Mega Source Elec.Limited
China

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IGBT Power Module MG50J6ES1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]The electrodes are isolated from case. [1]High input impedance. [1]6 IGBTs built into ...

Mega Source Elec.Limited
China

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IGBT Power Module MG50J6ES40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]The electrodes are isolated from case. [1]High input impedance. [1]6 IGBTs built into ...

Mega Source Elec.Limited
China

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IGBT Power Module MG50J6ES50- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 400A) trr = 0.15µs (Max.) (IF = 400A) [1]Low saturation voltage : VCE (sat) = ...

Mega Source Elec.Limited
China

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IGBT Power Module MG50Q2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications. Motor Control Applications. Applications: [1] High input impedance [1] High speed: tf = 0.5µs (max.) trr = 0.5µs (ma...

Mega Source Elec.Limited
China

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IGBT Power Module MG50Q2YS43 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications. Motor Control Applications. Applications: [1] High input impedance [1] High speed: tf = 0.5µs (max.) trr = 0.5µs (ma...

Mega Source Elec.Limited
China

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IGBT Power Module MG50Q2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...ail: TOSHIBA GTR Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf = 0.3µs (Max) @Inductive load...

Mega Source Elec.Limited
China

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IGBT Power Module MG75J1ZS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (max) (IC = 75A) trr = 0.15µs (max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2...

Mega Source Elec.Limited
China

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IGBT Power Module MG75J1ZS41- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (max) (IC = 75A) trr = 0.15µs (max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2...

Mega Source Elec.Limited
China

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