Total 100000 products for high voltage power module Manufacture & Suppliers

• IGBT Power Module MG50G2CL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G2CL1 Manufacturer TOSHIBA supply ability 10...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG50G2CL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G2CL2 Manufacturer TOSHIBA supply ability 10...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG50G2CL3 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G2CL3 Manufacturer TOSHIBA supply ability 10...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG50G2CL4 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G2CL4 Manufacturer TOSHIBA supply ability 10...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG50G2DM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G2DM1 Manufacturer TOSHIBA supply ability 10...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG50G6EL1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50G6EL1 Manufacturer TOSHIBA supply ability 10...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG50H1BS1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50H1BS1 Manufacturer TOSHIBA supply ability 10...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG50H1ZS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50H1ZS1 Manufacturer TOSHIBA supply ability 10...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG50J1ZS40- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satur...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG50N2YS9- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50N2YS9 Manufacturer TOSHIBA supply ability 10...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG50N2YS1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50N2YS1 Manufacturer TOSHIBA supply ability 10...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG50N6ES40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG50N6ES40 Manufacturer TOSHIBA supply ability 1...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG75Q1JS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q1JS40 Manufacturer TOSHIBA supply ability ...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG75Q1JS43 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q1JS43 Manufacturer TOSHIBA supply ability ...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG75Q2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q2YS40 Manufacturer TOSHIBA supply ability ...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG75Q2YS42 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q2YS42 Manufacturer TOSHIBA supply ability ...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG75Q2YS44 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...max) trr = 0.5µs (max) [1]Low saturation voltage : VCE (sat)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q2YS44 Manufacturer TOSHIBA supply ability ...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG100G1AL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG100G1AL2-4 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier

• IGBT Power Module MG100G1AL3 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

  Mega Source Elec.Limited

  China

  Verified Supplier

  Add to cart

  Contact Supplier