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High Voltage Power Module

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Total 100002 products for high voltage power module Manufacture & Suppliers

IGBT Power Module MG100G1AL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

Mega Source Elec.Limited
China

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IGBT Power Module MG100G1AL2-4 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

Mega Source Elec.Limited
China

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IGBT Power Module MG100G1AL3 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

Mega Source Elec.Limited
China

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IGBT Power Module MG100G1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG100G2CL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG100G2YL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG100G2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG100H2CL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG100H2DL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG100J6ES52 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG100M2YK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

Mega Source Elec.Limited
China

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IGBT Power Module MG150Q1JS43 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case. Specifications: part no. MG150Q1JS43 Manufacturer TOSHIBA supply ability 1...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG150Q1JS65H - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case. Specifications: part no. MG150Q1JS65H Manufacturer TOSHIBA supply ability ...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG150Q1JS65HA - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case. Specifications: part no. MG150Q1JS65HA Manufacturer TOSHIBA supply ability 10...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG400Q1US11 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf= 0.5µs (Max.) trr = 0.5µs (Max.) [1]Low satura...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG400Q1US41 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf= 0.5µs (Max.) trr = 0.5µs (Max.) [1]Low satura...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MG500Q1US2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG500Q1US2 Manufacturer TOSHIBA supply ability 1...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG500Q1US11 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG500Q1US11 Manufacturer TOSHIBA supply ability ...

Mega Source Elec.Limited
China

Verified Supplier

Add to cart
IGBT Power Module MG500Q1US21 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... (Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case Specifications: part no. MG500Q1US21 Manufacturer TOSHIBA supply ability ...

Mega Source Elec.Limited
China

Verified Supplier

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IGBT Power Module MIG30J103HD - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...

Mega Source Elec.Limited
China

Verified Supplier

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