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High Voltage Power Module

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Total 100000 products for high voltage power module Manufacture & Suppliers

Transceiver IGBT Power Module SMD Mounting DP83848TSQ/NOPB

... Ethernet Type Transceiver Status Active Packaging Reel - TR Manufacturer Texas Instruments Categories Integrated Circuits Supply Voltage - Operating 3 V to 3...

Yingxinyuan Int'l(Group) Ltd.
China

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High Frequency High Voltage Ignition Transformer , Pulse Ignition Coil For Gas / Oil Burners

Ferrite High Frequency Transformer Pulse Generator 15kv Ignition Coil,Ignition Coil for Gas/Oil Burners Features: Ignition coils for gas and oil burners Customized transformers for number of applications High-v...

Shaanxi Shinhom Enterprise Co.,Ltd
Shaanxi,China

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2500 Kva Cummins 2000 Kw Diesel Generator 4160V High Voltage

... High Voltage Generators for power station with 4160V Model No. STANDBY POWER PRIME POWER ENGINE ALTERNATOR CONTROLLER KVA KW KVA KW SCF2500 2500 2000 2000 1600 QSK60-G4 FLD734E 6110 Governor Class ISO8528 G...

Guangdong Sunkings Electric Co., Ltd
China

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CCEC 50hz High Voltage Generators 500kw Emergency Containerized Power Plant

500kw Emergency containerized power plant 50hz High Voltage Generators enerator Set Model HTD-100GF Rated Power 100kva 200kva 300kva 400kva 500kva Rated Voltage 400V/230V Rated Frequency 50Hz/60Hz Type Open/Sil...

Guangdong Sunkings Electric Co., Ltd
China

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LM317 Sensors For Arduino Power Voltage Regulator Step down Power Module + LED Voltmeter

... voltage is 1.25V-28V DC continuously adjustable, versatile DC board. Using double adjustment potentiometer: when using LM317T for adjustable power supply, often lead to output voltage increases and burned t...

Oky Newstar Technology Co., Ltd
Guangdong,China

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50W 100k Non-Inductive High Voltage Resistor Power With Mounting

... High Voltage Power Resistors with mounting Structure : 1.Screen printing ,resistor film printed layer with thickness of tens of microns,sintered at temperature. 2.The matrix is 95% aluminum oxide ceramic,wi...

Shenzhen Zenithsun Electronics Tech.CO.,LTD
Guangdong,China

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3 Pin 3.3v Dc Dc Step Down Converter Module Ldo Regulator Ams1117-3.3 Power Module

...Module Ldo Regulator Ams1117-3.3 Power Module Description 1. Input: DC 4.5V-7V (The input voltage must be more than 1V higher than the output voltage 2. Output: 3.3V, 800mA (load current cannot exceed 800mA)...

Oky Newstar Technology Co., Ltd
Guangdong,China

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Black IGBT Power Module Texas Instruments TI ISO1432BDWR

IGBT Power Module Texas Instruments/TI ISO1432BDWR Duplex Full Data rate (Max) (Mbps) 12 Isolation rating (Vrms) 5000 Integrated isolated power No Operating temperature range (C) -40 to 125 Fail safe Idle, Open...

Yingxinyuan Int'l(Group) Ltd.
China

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100Mbps IGBT Power Module Black TI ISOW7741FDFMR 10000Vpk 5000Vrms

...Power Module Texas Instruments/TI ISOW7741FDFMR Type Digital isolator Data rate (Max) (Mbps) 100 Isolation rating (Vrms) 5000 Surge voltage capability (Vpk) 10000 Operating temperature range (C) -40 to 125 R...

Yingxinyuan Int'l(Group) Ltd.
China

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IGBT Power Module MG15D4HM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG15D6EM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AL3- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G1AM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G4GM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G6EL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG15G6EM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG15H1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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